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Control of the 3-Fold Symmetric Shape of Group III-Nitride Quantum Dots: Suppression of Fine-Structure Splitting.
Nano Letters ( IF 9.6 ) Pub Date : 2020-09-10 , DOI: 10.1021/acs.nanolett.0c02236
Hwan-Seop Yeo 1 , Kwanjae Lee 1 , Jong-Hoi Cho 1 , Seoung-Hwan Park 2 , Yong-Hoon Cho 1
Affiliation  

Controlling the in-plane symmetry of wide-bandgap semiconductor quantum dots (QDs) is essential for room temperature quantum photonic applications using polarization entangled photon pairs. Herein, we report the formation of 3-fold symmetric group III-nitride QDs at the apex of a triangular pyramid via a self-limited growth mechanism. We employed the in-plane rotational symmetry of the c-plane of a Wurtzite crystal and the large built-in piezoelectric field to reduce fine-structure splitting. The QDs exhibit emission that is distinguishable from that of sidewall quantum wells, and the biexciton–exciton cascade possesses a single-photon nature. We observed the relatively low optical polarization anisotropy and small fine structure splitting under the measurement limit (270 μeV) with the 3-fold symmetric QD. In contrast with current strategies that consider group III-nitride QDs as strongly polarized single-photon emitters, our approach for controlling the QD symmetry provides a new perspective on such QDs, as polarization-entangled photon pairs.

中文翻译:

III族氮化物量子点的三折对称形状的控制:精细结构分裂的抑制。

对于使用极化纠缠光子对的室温量子光子应用,控制宽带隙半导体量子点(QD)的面内对称性至关重要。在这里,我们报告通过自我限制的生长机制在三角锥的顶点形成3倍对称的III型氮化物QDs。我们采用了c的面内旋转对称性纤锌矿晶体的平面和内置的大压电场,以减少精细结构的分裂。QD的发射与侧壁量子阱的发射是有区别的,并且双激子-激子级联具有单光子性质。我们观察到在3倍对称QD的测量极限(270μeV)下相对较低的光偏振各向异性和较小的精细结构分裂。与当前将III族氮化物量子点视为强偏振单光子发射器的策略相比,我们控制量子点对称性的方法为此类量子点提供了新的视角,例如偏振纠缠的光子对。
更新日期:2020-09-10
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