Gallium nitride (GaN) films on high-thermal-conductivity substrates have attracted considerable attention for their applications in high-power light-emitting diodes and electronic devices. Herein, a 2-inch 8-µm-thick thermostable GaN/Mo template with Ga-face was fabricated via two consecutive layer transfer technique. The full-widths at half-maximum for the x-ray rocking curves of GaN (002) and (102) plane were 314 and 325 arcsec, respectively. Atomic force microscopy revealed that the surface had step-and-terrace structures with a root-mean-square value of 0.397 nm. Five periods of In0.15Ga0.85N/GaN multiple-quantum-wells and Mg-doped p-type GaN layers were regrown on the GaN/Mo template, which exhibited blue light emission without distinct degradation.

中文翻译：

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通过层转移在钼衬底上制备耐热 Ga 面 GaN 模板

高导热衬底上的氮化镓 (GaN) 薄膜因其在高功率发光二极管和电子设备中的应用而引起了广泛关注。在此，通过两层连续转移技术制造了具有 Ga 面的 2 英寸 8 微米厚的热稳定 GaN/Mo 模板。GaN (002) 和 (102) 平面的 X 射线摇摆曲线的半峰全宽分别为 314 和 325 弧秒。原子力显微镜显示该表面具有阶梯状和阶梯状结构，均方根值为 0.397 nm。五个周期的 In0.15Ga0.85N/GaN 多量子阱和 Mg 掺杂的 p 型 GaN 层在 GaN/Mo 模板上重新生长，其表现出蓝光发射而没有明显的退化。