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Energy-efficient ferroelectric domain wall memory with controlled domain switching dynamics.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsami.0c13534 Chao Wang 1 , Jun Jiang 1 , Xiaojie Chai 1 , Jianwei Lian 1 , Xiaobing Hu 1 , An Quan Jiang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsami.0c13534 Chao Wang 1 , Jun Jiang 1 , Xiaojie Chai 1 , Jianwei Lian 1 , Xiaobing Hu 1 , An Quan Jiang 1
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High readout domain-wall currents in LiNbO3 single-crystal nanodevices are attractive because of their application in a ferroelectric domain wall random access memory (DWRAM) to drive a fast memory circuit. However, the wall current at a small read voltage would increase nonlinearly at a much higher write voltage, which could cause high energy consumption. Here, we resolved this problem by controlling the two-step domain forward growth within a ferroelectric mesa-like cell that was formed at the surface of an X-cut LiNbO3 single crystal. The mesa-like cell contacts two side Pt/Ni electrodes that extend over the cell surface by 90 nm for the generation of an in-plane inhomogeneous electric field. The domain forward growth processes at first in the formation of an inclined charged 180° domain to span the in-plane electrode gap under a write voltage of 5 V in a large readout wall current, and then, the domain expands fully throughout the entire cell in the formation of a neutral 180° wall to reduce the wall current by 10 times at a higher write voltage of 6 V. Meantime, the domain below the mesa-like cell in an opposite orientation is unchanged to serve as the reference. A higher wall current at a lower read voltage and a lower wall current at a higher write voltage can satisfy both requirements of low energy consumption and fast operation speeds for the DWRAM.
中文翻译：
具有受控畴切换动态特性的高能效铁电畴壁存储器。
LiNbO 3单晶纳米器件中的高读出畴壁电流很有吸引力，因为它们在铁电畴壁随机存取存储器（DWRAM）中用于驱动快速存储电路。但是，较小的读取电压下的壁电流将在较高的写入电压下非线性增加，这可能会导致高能耗。在这里，我们通过控制在X切割LiNbO 3表面形成的铁电台面状电池内的两步畴正向生长来解决此问题单晶。台面状电池接触两个侧面Pt / Ni电极，它们在电池表面上延伸90 nm，以产生面内非均匀电场。畴正向生长首先在倾斜的180°畴的形成过程中进行，以在大的读出壁电流下在5 V的写入电压下跨越平面内电极间隙，然后畴在整个单元中完全扩展在形成中性的180°壁时，可以在6 V的较高写入电压下将壁电流减小10倍。同时，在台面状单元下方相反方向的区域保持不变，可以用作参考。在较低的读取电压下较高的壁电流和在较高的写入电压下较低的壁电流可以满足DWRAM的低能耗和快速运行速度的要求。
更新日期：2020-10-07
中文翻译：
具有受控畴切换动态特性的高能效铁电畴壁存储器。
LiNbO 3单晶纳米器件中的高读出畴壁电流很有吸引力，因为它们在铁电畴壁随机存取存储器（DWRAM）中用于驱动快速存储电路。但是，较小的读取电压下的壁电流将在较高的写入电压下非线性增加，这可能会导致高能耗。在这里，我们通过控制在X切割LiNbO 3表面形成的铁电台面状电池内的两步畴正向生长来解决此问题单晶。台面状电池接触两个侧面Pt / Ni电极，它们在电池表面上延伸90 nm，以产生面内非均匀电场。畴正向生长首先在倾斜的180°畴的形成过程中进行，以在大的读出壁电流下在5 V的写入电压下跨越平面内电极间隙，然后畴在整个单元中完全扩展在形成中性的180°壁时，可以在6 V的较高写入电压下将壁电流减小10倍。同时，在台面状单元下方相反方向的区域保持不变，可以用作参考。在较低的读取电压下较高的壁电流和在较高的写入电压下较低的壁电流可以满足DWRAM的低能耗和快速运行速度的要求。
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