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High-Detectivity Non-Fullerene Organic Photodetectors Enabled by a Cross-Linkable Electron Blocking Layer.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-09-11 , DOI: 10.1021/acsami.0c13833
Zhiming Zhong 1, 2 , Feng Peng 1, 2 , Zhenqiang Huang 1 , Lei Ying 1, 2 , Gang Yu 1 , Fei Huang 1, 2 , Yong Cao 1
Affiliation  

The anode interlayer plays a critical role in the performance of organic photodetectors, which requires sufficient electron-blocking ability to simultaneously attain a high photocurrent and low dark current. Here, we developed two cross-linkable polymers, which can be deposited on the top of the widely used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and form a robust layer that can effectively suppress the electron injection from the anode under reverse bias. The optimized device with the resulting cross-linkable XP2 exhibited the lowest dark current density of 5.81 × 10–9 A cm–2 at −0.1 V, which is about 2 orders of magnitude lower than the control devices. A remarkable responsivity of 0.5 A W–1 and a detectivity of >1 × 1013 Jones at a near-infrared wavelength of 800 nm were achieved. Of particular importance is that the resulting device exhibited a linear dynamic range of >135 dB associated with a high working frequency that is shorter than typical commercial digital imagers. The planar heterojunction devices demonstrate that the dark current is closely correlated to the charge generation, which relied on the highest occupied molecular orbital energy levels of the developed cross-linked interlays. The Mott–Schottky analysis revealed that the optimized cross-linked interlayer increased the depletion width of the devices.

中文翻译:

可交联电子阻挡层实现的高检测率非富勒烯有机光电探测器。

阳极夹层在有机光电探测器的性能中起关键作用,有机光电探测器需要足够的电子阻挡能力才能同时获得高光电流和低暗电流。在这里,我们开发了两种可交联的聚合物,它们可以沉积在广泛使用的聚(3,4-乙撑二氧噻吩)聚苯乙烯磺酸盐(PEDOT:PSS)的顶部,并形成可以有效抑制电子注入的坚固层。阳极承受反向偏压。具有所产生的可交联XP2的优化器件在-0.1 V时的最低暗电流密度为5.81×10 –9 A cm –2,比控制器件低约2个数量级。0.5 AW –1的出色响应度和> 1×10的检测率获得了在800 nm的近红外波长下的13 Jones。尤为重要的是,所得到的设备表现出大于135 dB的线性动态范围,并具有比典型的商用数字成像仪短的高工作频率。平面异质结器件表明,暗电流与电荷的产生密切相关,电荷的产生依赖于发达的交联夹层的最高占据分子轨道能级。莫特-肖特基分析表明,优化的交联中间层增加了器件的耗尽宽度。
更新日期:2020-10-07
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