Over 10% Efficient Wide Bandgap CIGSe Solar Cells on Transparent Substrate with Na Predeposition Treatment,Solar RRL

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Over 10% Efficient Wide Bandgap CIGSe Solar Cells on Transparent Substrate with Na Predeposition Treatment
Solar RRL ( IF 6.0 ) Pub Date : 2020-09-11 , DOI: 10.1002/solr.202000284
Mohamed Ould Salem ₁ , Robert Fonoll ₁ , Sergio Giraldo ₁ , Yudania Sanchez ₁ , Marcel Placidi _{1,

2} , Victor Izquierdo-Roca ₁ , Claudia Malerba ₃ , Matteo Valentini ₃ , Diouldé Sylla ₁ , Angelica Thomere ₁ , Dah Ould Ahmedou ₄ , Edgardo Saucedo _{1,

2} , Alejandro Pérez-Rodríguez _{1,

5} , Zacharie Jehl Li-Kao _{1,

2}

Affiliation

With the recent rise of new photovoltaic applications, it has become necessary to develop specific optoelectronic properties for thin‐film technologies such as Cu(In,Ga)Se₂ and to take advantage of their high degree of tunability. The feasibility of efficient wide bandgap absorbers on transparent conductive oxide substrates is, in that context, of critical importance. Using an original approach based on a predeposition sodium treatment, Cu(In,Ga)Se₂ absorbers fabricated by sputtering and reactive annealing with a Ga to (Ga + In) content over 0.7 and an optical bandgap above 1.4 eV are deposited on transparent fluorine‐doped tin oxide films, with the insertion of an ultrathin MoSe₂ layer preserving the contact's ohmicity. Different material characterizations are carried out, and a thorough Raman analysis of the absorber reveals that the sodium pretreatment significantly enhances the Ga incorporation into the chalcopyrite matrix, along with markedly improving the film's morphology and crystalline quality. This translates to a spectacular boost of the photovoltaic performance for the resulting solar cell as compared with a reference device without Na, specifically in the voltage and fill factor. Eventually, an efficiency exceeding 10% is obtained without antireflection coating, a record value bridging the gap with the state of the art on nontransparent substrates.

中文翻译：

采用Na预先沉积处理的透明衬底上效率超过10％的宽带隙CIGSe太阳能电池

随着最近新的光伏应用的兴起，有必要为诸如Cu（In，Ga）Se ₂的薄膜技术开发特定的光电性能，并利用其高度的可调谐性。在这种情况下，在透明导电氧化物基底上高效宽带隙吸收剂的可行性至关重要。使用基于预沉积钠处理的原始方法，在透明的氟上沉积Cu（In，Ga）Se ₂吸收剂，该吸收剂是通过溅射和反应退火制造的，Ga的（Ga + In）含量超过0.7，光带隙超过1.4 eV掺杂氧化锡薄膜，并插入超薄MoSe ₂保留触点的欧姆层。进行了不同的材料表征，并且对吸收剂进行了彻底的拉曼分析表明，钠预处理显着提高了Ga结合到黄铜矿基质中的含量，并显着改善了膜的形貌和晶体质量。与没有Na的参考装置相比，这转化为所得太阳能电池的光伏性能的显着提高，特别是在电压和填充系数方面。最终，在没有抗反射涂层的情况下，可获得超过10％的效率，这是在非透明基板上弥补了现有技术水平的空白。

更新日期：2020-11-06

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