Probing Defects in MoS2 Van der Waals Crystal through Deep‐Level Transient Spectroscopy,Physica Status Solidi-Rapid Research Letters

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Probing Defects in MoS2 Van der Waals Crystal through Deep‐Level Transient Spectroscopy
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-09-10 , DOI: 10.1002/pssr.202000381
Łukasz Gelczuk ₁ , Jan Kopaczek ₂ , Paweł Scharoch ₂ , Katarzyna Komorowska ₃ , Mark Blei ₄ , Sefaattin Tongay ₄ , Robert Kudrawiec _{2,

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Affiliation

The electrical performance of transition metal dichalcogenides (TMDCs) is strongly affected by the quality of electrical metal contacts and the formation of electrically active defects. Herein, deep‐level transient spectroscopy (DLTS) is used for direct probing of deep‐level defects in the bandgap of single MoS₂ van der Waals crystal. Standard DLTS temperature spectra reveal a deep‐level trap located at about 0.36 eV below the conduction band edge. This trap is tentatively attributed to sulfur vacancies and localized on the electronic band structure of MoS₂, obtained within the density functional theory (DFT), and matched with experimentally studied electronic band structure, by absorption and contactless electroreflectance (CER) spectroscopy.

中文翻译：

通过深层瞬态光谱探测MoS2范德华晶体中的缺陷

过渡金属二硫化碳（TMDC）的电性能受到金属电触点质量和电活性缺陷形成的强烈影响。在此，深层瞬态光谱法（DLTS）用于直接探测单个MoS ₂ van der Waals晶体的带隙中的深层缺陷。标准的DLTS温度谱揭示了一个深层陷阱，位于导带边缘以下约0.36 eV。该陷阱初步归因于硫空位，并位于通过密度泛函理论（DFT）获得的MoS _2的电子能带结构上，并通过吸收和非接触电反射（CER）光谱与实验研究的电子能带结构相匹配。

更新日期：2020-09-10

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