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2D WS2: From Vapor Phase Synthesis to Device Applications
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000688
Changyong Lan 1, 2 , Chun Li 1, 2, 3 , Johnny C. Ho 4, 5 , Yong Liu 1, 2
Affiliation  

The discovery of graphene has triggered the research on 2D layer structured materials. Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are widely considered to be the most promising ones due to their excellent electrical and optoelectronic characteristics. Tungsten disulfide (WS2) is a kind of such TMDs with fascinating properties, such as the high carrier mobility, appropriate band gap, strong light–matter interaction with the large light absorption coefficient, very large exciton binding energy, large spin splitting, and polarized light emission. All these interesting properties can make the 2D WS2 being highly favorable for applications in memristors, light-emitting devices, optical modulators, and many others. Here, the comprehensive review on the properties, vapor phase synthesis, electronic and optoelectronic applications of 2D WS2 is presented. This review does not only serve as a design guideline to elevate the material quality of 2D WS2 films via enhanced synthesis approaches, but also provides valuable insights to various strategies to improve their device performances. With the fast development of wafer-scale synthesis methods and novel device structures, 2D WS2 can undoubtedly be a rising star for the next-generation devices in the near future.

中文翻译:

2D WS2:从气相合成到设备应用

石墨烯的发现引发了对二维层状结构材料的研究。在众多二维材料中,半导体过渡金属二硫属化物(TMD)因其优异的电学和光电特性而被广泛认为是最有前途的材料。二硫化钨(WS 2)是一种具有引人入胜的TMDs,如载流子迁移率高、带隙合适、光-物质相互作用强、光吸收系数大、激子结合能非常大、​​自旋分裂大、偏振光发射。所有这些有趣的特性都可以使 2D WS 2非常有利于在忆阻器、发光器件、光调制器等领域的应用。在这里,对二维 WS 2的性质、气相合成、电子和光电应用进行了全面回顾。这篇综述不仅作为设计指南,通过增强的合成方法提高2D WS 2薄膜的材料质量,而且还为各种提高器件性能的策略提供了宝贵的见解。随着晶圆级合成方法和新型器件结构的快速发展,2D WS 2在不久的将来无疑可以成为下一代器件的后起之秀。
更新日期:2020-09-11
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