Optical Monitoring of the Resistive States of a Polyaniline‐Based Memristive Device,Advanced Electronic Materials

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Optical Monitoring of the Resistive States of a Polyaniline‐Based Memristive Device
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000511
Dmitry A. Lapkin ₁ , Alexey N. Korovin ₁ , Sergey N. Malakhov ₁ , Andrey V. Emelyanov _{1,

2} , Vyacheslav A. Demin _{1,

2} , Victor V. Erokhin _{1,

3}

Affiliation

Organic memristive devices are of great interest nowadays due to their low costs, flexibility, and prospects of use in artificial neuromorphic systems. Polyaniline (PANI) is a conductive and electrochemically active polymer and a promising material for redox‐gated memristive devices. In this work, the electrochromic properties of PANI are utilized for spatially resolved mapping of electrochemical reactions in the active zone of a model PANI‐based device. The observed nonuniform propagation of the reaction front defines the difference in the kinetics of the device while switching from the low‐ to high‐resistance state and vice versa. This study both reveals the mechanism of resistive switching in redox‐gated memristive elements and offers a novel nondestructive method for monitoring the resistive state of PANI‐based memristive devices.

中文翻译：

基于聚苯胺的忆阻器件电阻状态的光学监控

由于其低成本，灵活性以及在人工神经形态学系统中的应用前景，有机忆阻装置如今备受关注。聚苯胺（PANI）是一种导电且具有电化学活性的聚合物，是用于氧化还原门磁忆阻器件的有前途的材料。在这项工作中，PANI的电致变色特性用于基于PANI的模型设备的活动区域中的电化学反应的空间分辨映射。从低电阻状态切换到高电阻状态，反之亦然，观察到的反应前沿非均匀传播定义了装置动力学的差异。这项研究既揭示了氧化还原门控忆阻元件中的电阻切换机制，又提供了一种新颖的非破坏性方法来监控基于PANI的忆阻器件的电阻状态。

更新日期：2020-10-11

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