Wrinkled‐Surface‐Induced Memristive Behavior of MoS2 Wrapped GaN Nanowires,Advanced Electronic Materials

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Wrinkled‐Surface‐Induced Memristive Behavior of MoS2 Wrapped GaN Nanowires
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000571
Yu‐Hang Ji ₁ , An‐Ping Huang ₁ , Meng‐Qi Yang ₂ , Qin Gao ₁ , Xiu‐Li Yang ₁ , Xue‐Liang Chen ₁ , Mei Wang ₁ , Zhi‐Song Xiao ₁ , Ru‐Zhi Wang ₂ , Paul K. Chu ₃

Affiliation

1D memristors with nonvolatile memristive characteristics have large potential in brain‐like neuromorphic computation and digital logic circuits. Herein, a novel memristive device based on wrinkled MoS₂ wrapped GaN nanowires (NWs) with a spray‐coated Ag NWs network top electrode is described. The memristive device shows good stability/durability and retention characteristics for 798 cycles and 3.4 × 10³ s, respectively, together with low switching voltages. A memristive model based on filament formation/rupture in the wrinkled surface of the NWs is proposed by analyzing the conductive characteristics and surface structure. Bipolar resistive switching is governed by the electric field associated with the wrinkled structure giving rise to migration of oxygen ions along the wrinkled surface of the NWs. The results enrich the knowledge pertaining to the design and optimization of memristors composed of NWs and also provide insights into the memristive behavior of memristors composed of 1D materials.

中文翻译：

MoS2包裹的GaN纳米线的皱纹表面诱导忆阻行为

具有非易失性忆阻特性的一维忆阻器在类脑神经形态计算和数字逻辑电路中具有巨大潜力。本文介绍了一种新型的忆阻器件，该器件基于具有皱纹的MoS ₂包裹的GaN纳米线（NW）和喷涂的Ag NWs网络顶部电极。忆阻器件在798次循环和3.4×10 ^3时表现出良好的稳定性/耐久性和保留特性s和低开关电压。通过分析导电特性和表面结构，提出了一种基于细丝在皱纹表面形成/破裂的忆阻模型。双极电阻切换受与起皱结构相关的电场控制，该电场导致氧离子沿NW的起皱表面迁移。结果丰富了与NW组成的忆阻器的设计和优化有关的知识，还提供了对由一维材料组成的忆阻器的忆阻行为的见解。

更新日期：2020-10-11

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