Spontaneous Generation of Carrier Electrons at the Interface between Polycrystalline ZnO and Amorphous InGaZnO4,Advanced Electronic Materials

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Spontaneous Generation of Carrier Electrons at the Interface between Polycrystalline ZnO and Amorphous InGaZnO4
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000404
Fabian Krahl ₁ , Yuzhang Wu ₂ , Hai Jun Cho _{2,

3} , Maarit Karppinen ₁ , Hiromichi Ohta _{2,

3}

Affiliation

The interface between two materials can be expected to show exotic optical, electrical, and thermal transport properties due to the difference in chemical bonding and chemical potential. However, in conventional material systems, the volume fraction of the interface is small compared to bulk, and interfacial properties are thus difficult to utilize. In this regard, multilayered films are essential to increase the volume fraction of interfaces and functionalize their properties. Here it is shown that carrier electrons can be generated spontaneously at the interface between polycrystalline ZnO and amorphous (a‐) InGaZnO₄. The electron transport properties are measured of multilayered films composed of c‐axis oriented polycrystalline ZnO and a‐InGaZnO₄ with varying interface density (d⁻¹). Although the carrier concentrations of both ZnO and a‐InGaZnO₄ are less than 5 × 10¹⁹ cm⁻³, the n increases with d⁻¹ and exceedes 10²⁰ cm⁻³. The relatively large interface thermal resistance between ZnO and a‐InGaZnO₄ (1.35 m² K GW⁻¹) indicates the existence of a large difference in the chemical bonding and the chemical potential and thus conduction electrons would accumulate at the interface.

中文翻译：

在多晶ZnO和非晶InGaZnO4之间的界面上自发产生载流子

由于化学键和化学势的差异，两种材料之间的界面有望显示出奇特的光学，电学和热学传输特性。但是，在常规的材料系统中，与体积相比，界面的体积分数小，因此难以利用界面性质。在这方面，多层膜对于增加界面的体积分数并使其功能功能化至关重要。在此表明，载流子电子可以在多晶ZnO与非晶（a-）InGaZnO ₄之间的界面上自发产生。测量了由c轴取向的多晶ZnO和a-InGaZnO ₄组成的多层膜的电子传输性能具有变化的界面密度（d ^-1）。尽管ZnO和a-InGaZnO ₄的载流子浓度均小于5×10 ¹⁹ cm ^-3，但n随d ^-1增加而超过10 ²⁰ cm ^-3。ZnO和a-InGaZnO ₄之间的相对较大的界面热阻（1.35 m ² K GW ^-1）表明在化学键合和化学势上存在较大差异，因此传导电子会在界面处积聚。

更新日期：2020-10-11

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