In flexible neuromorphic electronics, solution‐processed organic memristors are important elements to perform memory functions. Despite considerable development for improving performances of organic memristors, the devices still exhibit the poor reliability and uniformity due to the stochastic characteristics of the conductive filament (CF) growth. Herein, the effective concept of introducing the interfacial load polymer (ILP) layers that control the CF growth in flexible organic memristors is demonstrated. In the flexible organic memristor, the ILP serves as an internal load resistor that regulates the CF growth in the electrolyte medium and the electron blocking layer, hence realizing self‐rectifying characteristics. In particular, the ILP provides the self‐compliance current of the device, which delicately limits the overgrowth of CFs. The flexible device delivers higher electrical performance (better reliability, uniformity, and the switching currents) than conventional devices without the ILP. Moreover, the device operates stably under repeated bending–straightening deformations. This unprecedented concept of achieving the capabilities of self‐compliance current and self‐rectifying property in a single memristor will provide a practical platform for constructing and realizing next‐generation flexible neuromorphic systems.

中文翻译：

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将界面负载聚合物层引入有机柔性忆阻器中以调节导电丝的生长

在柔性神经形态电子学中，溶液处理的有机忆阻器是执行记忆功能的重要元素。尽管为改善有机忆阻器的性能进行了大量开发，但是由于导电丝（CF）生长的随机特性，该器件仍显示出较差的可靠性和均匀性。本文中，展示了引入界面负载聚合物（ILP）层来控制柔性有机忆阻器中CF生长的有效概念。在柔性有机忆阻器中，ILP用作内部负载电阻器，可调节电解质介质和电子阻挡层中CF的生长，从而实现自整流特性。特别是，ILP提供了设备的自兼容电流，从而微妙地限制了CF的过度增长。与不带ILP的常规设备相比，该柔性设备可提供更高的电气性能（更好的可靠性，均匀性和开关电流）。此外，该设备在反复弯曲-矫直变形下可稳定运行。在单个忆阻器中实现自适应电流和自整流性能的能力这一前所未有的概念将为构建和实现下一代灵活的神经形态系统提供一个实用的平台。