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Reconfigurable Beamforming Silicon Plasma Antenna with Vertical PIN Diode Array
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000257 Jae Hur 1 , In‐Joong Nam 2 , Young‐Kyun Cho 3 , Da‐Jin Kim 1 , Eon‐Seok Jo 4 , Seokmin Lee 4 , Choong‐Ki Kim 1 , Geon‐Beom Lee 1 , Cheol Ho Kim 5 , Seok Bong Hyun 5 , Dongho Kim 2 , Yang‐Kyu Choi 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-09-11 , DOI: 10.1002/aelm.202000257 Jae Hur 1 , In‐Joong Nam 2 , Young‐Kyun Cho 3 , Da‐Jin Kim 1 , Eon‐Seok Jo 4 , Seokmin Lee 4 , Choong‐Ki Kim 1 , Geon‐Beom Lee 1 , Cheol Ho Kim 5 , Seok Bong Hyun 5 , Dongho Kim 2 , Yang‐Kyu Choi 1
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For the first time, this study demonstrates a reconfigurable antenna with electrical beamforming that is entirely integrated by semiconductor microfabrication technology. In this paper, a vertical structured array of solid‐state plasma which acts as a reconfigurable conducting wall to control the main beam direction of an antenna is proposed. In many conventional works, insufficient electrical conductivity of turned‐on plasma channels at the planar surface of PIN diodes causes an inherent large loss and low radiation efficiency of silicon‐based antennas. However, in this study, the overall performance of the antenna is notably enhanced by adopting the vertical plasma channels which solve the lower electrical conductivity problem of the surface‐type plasma structure. Accordingly, the proposed antenna achieves a high realized gain of more than 5 dBi over a frequency range of 27.5–29.6 GHz, even though it is comprised of lossy silicon with high permittivity. In addition, the low cost and electrically reconfigurable antenna, which benefits from the highly precise semiconductor fabrication process, is applicable to sub‐THz applications with a lightweight and compact sized feature. This work paves the way to make silicon antennas with commercial microfabrication technology a next‐generation antenna.
中文翻译：
具有垂直PIN二极管阵列的可重构波束形成硅等离子体天线
这项研究首次展示了一种具有电子波束成形的可重构天线，该天线完全由半导体微加工技术集成在一起。本文提出了一种垂直结构的固态等离子体阵列，该阵列可作为可重构的导电壁来控制天线的主波束方向。在许多常规工作中，在PIN二极管平面上打开的等离子通道的电导率不足会导致硅基天线固有的大损耗和低辐射效率。但是，在这项研究中，采用垂直等离子体通道可显着提高天线的整体性能，从而解决了表面等离子体结构较低的电导率问题。因此，所建议的天线即使在27.5–29.6 GHz的频率范围内也能实现超过5 dBi的高实现增益，即使该天线由具有高介电常数的有损耗硅组成。此外，得益于高度精确的半导体制造工艺，这种低成本，可电重新配置的天线适用于具有轻巧紧凑尺寸的亚太赫兹应用。这项工作为将具有商用微细加工技术的硅天线制成下一代天线铺平了道路。
更新日期：2020-09-11
中文翻译：
具有垂直PIN二极管阵列的可重构波束形成硅等离子体天线
这项研究首次展示了一种具有电子波束成形的可重构天线，该天线完全由半导体微加工技术集成在一起。本文提出了一种垂直结构的固态等离子体阵列，该阵列可作为可重构的导电壁来控制天线的主波束方向。在许多常规工作中，在PIN二极管平面上打开的等离子通道的电导率不足会导致硅基天线固有的大损耗和低辐射效率。但是，在这项研究中，采用垂直等离子体通道可显着提高天线的整体性能，从而解决了表面等离子体结构较低的电导率问题。因此，所建议的天线即使在27.5–29.6 GHz的频率范围内也能实现超过5 dBi的高实现增益，即使该天线由具有高介电常数的有损耗硅组成。此外，得益于高度精确的半导体制造工艺，这种低成本，可电重新配置的天线适用于具有轻巧紧凑尺寸的亚太赫兹应用。这项工作为将具有商用微细加工技术的硅天线制成下一代天线铺平了道路。
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