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The electronic properties and defect chemistry of Bi2-xSe3, –0.05
Journal of Physics and Chemistry of Solids ( IF 4.3 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.jpcs.2020.109752 B.P.P. Mallett , S.V. Chong , R. Guehne , A. Chan , P. Murmu , J. Kennedy , R.G. Buckley
Journal of Physics and Chemistry of Solids ( IF 4.3 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.jpcs.2020.109752 B.P.P. Mallett , S.V. Chong , R. Guehne , A. Chan , P. Murmu , J. Kennedy , R.G. Buckley
Abstract The Hall effect, temperature dependent resistivity, and optical spectroscopy (4.3 meV–6.2 eV) of a series of Bi2-xSe3 crystals in the range −0.05
中文翻译：
Bi2-xSe3 的电子特性和缺陷化学，–0.05
摘要 -0.05 范围内的一系列 Bi2-xSe3 晶体的霍尔效应、温度相关电阻率和光谱 (4.3 meV–6.2 eV)
更新日期：2021-01-01
中文翻译：
Bi2-xSe3 的电子特性和缺陷化学，–0.05
摘要 -0.05 范围内的一系列 Bi2-xSe3 晶体的霍尔效应、温度相关电阻率和光谱 (4.3 meV–6.2 eV)
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