ZnO and ZnO:Al thin films have been successfully synthesized by simple solution processable method at low temperature. Highly crystalline (002) preferentially oriented, uniform, and smooth ZnO:Al thin films are produced. The electrical, J-V and C-V, measurements revealed higher current flow and more carrier concentration, respectively, for ZnO:Al samples compared with pristine ZnO. ZnO- and ZnO:Al-based field effect transistors (FETs) were fabricated using SiO2 and TiO2 gate dielectric layers onto flexible plastic, ITO and rigid, p-Si substrates. The ZnO:Al-based FETs measured better transistor performance with both SiO2 and TiO2 gate dielectrics as compared with ZnO-based TFTs. The saturated field effect mobilities 5.78 and 4.96 cm2/Vs were measured for ZnO:Al-based TFTs with SiO2 and TiO2 dielectrics, which reasonably higher than 0.51 and 0.43 cm2/Vs, respectively, measured for pristine ZnO TFTs. The effect of smooth surface and reduced grain boundaries of ZnO:Al layer contributed to measure the low-interface trap density and trap density at grain boundaries. The reported procedure can be applicable to produce large area transparent electronics onto flexible plastic substrates.

中文翻译：

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溶胶凝胶衍生的透明金属氧化物柔性场效应晶体管。

ZnO和ZnO：Al薄膜已通过简单的低温溶液加工方法成功合成。产生了高度结晶的（002）优先取向，均匀和光滑的ZnO：Al薄膜。电学，JV和CV测量显示，与原始ZnO相比，ZnO：Al样品分别具有更高的电流流动和更高的载流子浓度。基于ZnO和ZnO：Al的场效应晶体管（FET）是使用SiO2和TiO2栅极介电层在柔性塑料，ITO和刚性p-Si衬底上制造的。与基于ZnO的TFT相比，基于ZnO：Al的FET在SiO2和TiO2栅极电介质中均具有更好的晶体管性能。对于具有SiO2和TiO2介电常数的ZnO：Al基TFT，测量了饱和场效应迁移率5.78和4.96 cm2 / Vs，合理地高于0.51和0。原始ZnO TFT的测量值为43 cm2 / Vs。ZnO：Al层表面光滑和晶界减少的影响有助于测量低界面陷阱密度和晶界处的陷阱密度。报告的程序可适用于在柔性塑料基板上生产大面积透明电子器件。