ABSTRACT Controlling thermal transport in optoelectronic devices is a fundamental determinant of optimum performance. We study in-plane thermal transport mechanisms in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interface scattering. We provide an extensive microscopic analysis of phonon transport to enable rational thermal material design. We also predict the thermal conductivity of realistic finite-sized GaAs/AlAs superlattices for efficient heat control in III–V superlattice-based optoelectronic devices.

中文翻译：

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III-V族化合物半导体超晶格中的面内热声子传输分析

摘要 控制光电器件中的热传输是最佳性能的基本决定因素。我们研究了 GaAs/AlAs 及其合金基超晶格的面内热传输机制，同时严格考虑了声子层间耦合和界面散射。我们对声子传输进行了广泛的微观分析，以实现合理的热材料设计。我们还预测了现实的有限尺寸 GaAs/AlAs 超晶格的热导率，以便在基于 III-V 超晶格的光电器件中进行有效的热控制。