ABSTRACT We demonstrate the selectively p- or n-type doping behavior of conjugated block copolymer (BCP). The poly(3-hexylthiophene)-b-poly{[N,N-9-bis(2-octyldodecyl)-naphtalene-1, 4, 5, 7-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bithiophene)}, P3HT-b-P(NDI2OD-T2), has been successfully synthesized via Stille-coupling polymerization, and these p- and n-type blocks containing BCP can be doped using either F4TCNQ or N-DMBI, generating holes or electrons as carriers, respectively. The electrical conductivity of p-doped BCP is 1.4 × 10−3 S·cm−1, whereas, for n-doped BCP, the film conductivity is 1.7 × 10−4 S·cm−1 using the four-probe method. Further, we investigate the Seebeck coefficient of doped BCP, evaluating the potential properties for thermoelectric applications. The analysis results show that the synthesized conjugated BCP can be doped either way to induce holes or electrons from a single composite polymer, and when one block is doped, the other un-doped block has no influence on the electrical conductivity. Accordingly, doping either the p- or n-type phenomenon of a single polymer is demonstrated in this study, realizing a new strategy not only for thermoelectric materials but also for overall organic electric applications.

中文翻译：

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用于有机热电应用的共轭嵌段共聚物的选择性掺杂

摘要 我们展示了共轭嵌段共聚物 (BCP) 的选择性 p 型或 n 型掺杂行为。聚(3-己基噻吩)-b-聚{[N,N-9-bis(2-octyldodecyl)-naphtalene-1, 4, 5, 7-bis(dicarboximide)-2,6-diyl]-alt- 5,59-(2,29-bithiophene)}, P3HT-bP(NDI2OD-T2)，已经通过Stille-coupling聚合成功合成，这些含有BCP的p型和n型嵌段可以使用F4TCNQ或N-DMBI，分别产生空穴或电子作为载流子。p 掺杂 BCP 的电导率为 1.4 × 10-3 S·cm-1，而对于 n 掺杂 BCP，使用四探针方法的薄膜电导率为 1.7 × 10-4 S·cm-1。此外，我们研究了掺杂 BCP 的塞贝克系数，评估了热电应用的潜在特性。分析结果表明，合成的共轭 BCP 可以通过任何一种方式掺杂以从单个复合聚合物中诱导空穴或电子，并且当一个嵌段被掺杂时，另一个未掺杂的嵌段对电导率没有影响。因此，本研究证明了掺杂单个聚合物的 p 型或 n 型现象，不仅为热电材料而且为整体有机电应用实现了新策略。