The short history of the development in nitride semiconductors is described. As key issues for the future progress are concreted from this history, the polarity of crystal, the substrate for the epitaxial growth of nitride semiconductors, and emerging material, InN are introduced. The device applications including optical devices and transport devices are reviewed. Finally, this article looks into the future prospect of nitride semiconductors.

中文翻译：

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氮化物半导体概述

描述了氮化物半导体发展的短暂历史。由于从这个历史中可以看出未来发展的关键问题，因此介绍了晶体的极性，氮化物半导体外延生长的衬底以及新兴材料InN。审查了包括光学设备和传输设备在内的设备应用程序。最后，本文探讨了氮化物半导体的未来前景。