ABSTRACT In this article, a multilayer inductor for millimeter-wave regime was fabricated based on 130 nm SiGe process with compact size and high quality factor (Q). The area of cross-section for the proposed inductor is 40m40m and the highest Q value is 14 at millimeter-wave regime. We present a novel double- equivalent circuit and a modified parameter extraction method to characterize the multilayer inductor with excellent accuracy over a broad-band frequency up to 110 GHz. To improve the accuracy of circuit model of the multi-layer inductor, mutual coupling between different layers is introduced into the conventional double- model. Equivalent circuit parameters can be extracted from two-port S-parameters by utilizing the modified simple parameter extraction methodology. Simulation and measured results validate the validity of double- model and parameter extraction methodology with good accuracy.

中文翻译：

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基于 130 nm SiGe 工艺和改进的参数提取程序的多层电感器的新型双 π 模型

摘要 在本文中，基于 130 nm SiGe 工艺制造了用于毫米波范围的多层电感器，具有紧凑的尺寸和高品质因数 (Q)。所提出的电感器的横截面积为 40m40m，在毫米波范围内最高 Q 值为 14。我们提出了一种新颖的双等效电路和改进的参数提取方法，以在高达 110 GHz 的宽带频率上以出色的精度表征多层电感器。为了提高多层电感电路模型的精度，在传统的双模型中引入了不同层之间的互耦合。通过使用改进的简单参数提取方法，可以从两端口 S 参数中提取等效电路参数。