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X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells
ECS Journal of Solid State Science and Technology ( IF 1.8 ) Pub Date : 2020-09-09 , DOI: 10.1149/2162-8777/abb2b1
Zahra Khatami 1 , Lyndia Bleczewski 1 , John J. Neville 2 , Peter Mascher 3
Affiliation  

Synchrotron-based experiments in combination with optical measurements were used to explore the potential of a photovoltaic material based on silicon carbonitride (SiCN) thin films, in particular for the use in space solar cells. The large bandgap, SiCN films were fabricated using electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) followed by low-temperature annealing processes. X-ray absorption near edge structure (XANES) with excitations at the carbon, nitrogen, and silicon K-edges verifies that the presence of nitrogen tends to disrupt Si–C networks. This results in the enhancement of light absorption and bandgap widening, which is desirable for front emitters in all-silicon tandem solar cells. The ternary structure of SiCN allows bandgap engineering and tuning of the light absorption and refractive index through careful design of the composition. XANES showed that the thermal annealing at a medium temperature (500 °C) using N 2 ambi...

中文翻译:

氮改善全硅太阳能电池碳化硅薄膜的X射线吸收光谱

基于同步加速器的实验与光学测量相结合,用于探索基于碳氮化硅(SiCN)薄膜的光伏材料的潜力,特别是用于空间太阳能电池中。使用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)和低温退火工艺来制造大带隙SiCN薄膜。在碳,氮和硅K边缘处激发的近边缘结构(XANES)的X射线吸收证明,氮的存在会破坏Si-C网络。这导致光吸收增强和带隙加宽,这是全硅串联太阳能电池中的前发射极所希望的。SiCN的三元结构允许带隙工程以及通过仔细设计成分来调整光吸收和折射率。XANES表明使用N 2气氛在中等温度(500°C)下进行热退火...
更新日期:2020-09-10
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