To reduce the secondary emission yield of an RF window ceramic so as to suppress the occurrence of a multipactor, we propose coating the window with a titanium nitride (TiN) film by atomic layer deposition. We investigate two groups of samples with film thicknesses of 56 and 8 nm, respectively, to analyze the composition and optimize the coating thickness of the TiN film on the ceramic. For the first group of samples (56 nm films), x-ray photoelectron spectroscopy (XPS) results show that the film can be divided into three mixed layers: a top layer composed of TiO_xN_y and TiO₂; a middle layer consisting of TiN, TiO_xN_y, TiO₂, and TiC; and a bottom layer called a diffusion layer, formed by decreasing TiN, TiO_xN_y, TiO₂, TiC, and increasing $A{l}_2{O}_3$ as the ceramic is approached. The depth of this bottom layer is ∼8 nm. Two more films (8 nm films) in the second group of samples were grown on a 96 ceramic and silicon to determine the sheet resistance, those on silicon is ∼1 kΩ/□ as measured by spectroscopic ellipsometry. According to the XPS results of the two 8 nm films, the content of TiO_xN_y and TiO₂ increased while TiN content decreased in the film on 96 ceramic, compared to the film on silicon. Therefore, the 8 nm film is suitable for use as a coating for the RF window to weaken the multipactor effect and lower conductivity. To test the film performance, an RF ceramic window is coated with an 8 nm TiN film. Low-power measurements show that, within a frequency of 100 MHz, the 8 nm film on the RF ceramic window has a negligible effect on its transmission characteristics. 8 kW RF power tests indicate that the film coating can significantly improve the power transmission, anti-multipaction, and stability of the RF window.

中文翻译：

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通过原子层沉积研究RF陶瓷窗口上的TiN膜

为了降低RF窗口陶瓷的二次发射率，从而抑制多引线的出现，我们建议通过原子层沉积在窗口上涂一层氮化钛（TiN）膜。我们研究了两组样品，其膜厚分别为56 nm和8 nm，以分析其成分并优化TiN膜在陶瓷上的涂层厚度。对于第一组样品（56 nm薄膜），X射线光电子能谱（XPS）结果表明该薄膜可分为三层混合层：一层由TiO _x N _y和TiO ₂组成的顶层；另一层由TiO _x N _y和TiO _2组成。由TiN，TiO _x N _y，TiO ₂组成的中间层和TiC; 通过降低TiN，TiO _x N _y，TiO ₂，TiC并增加而形成的称为扩散层的底层$\mathrm{一种}{升}_2{Ø}_3$随着陶瓷的接近。该底层的深度为〜8nm。第二组样品中的另外两层膜（8 nm膜）在96陶瓷和硅上生长，以确定薄层电阻，通过光谱椭偏法测得，硅上的薄膜电阻约为1kΩ/□。根据两张8 nm薄膜的XPS结果，TiO _x N _y和TiO ₂的含量与硅膜相比，在96陶瓷膜上TiN含量增加，而TiN含量减少。因此，该8 nm膜适合用作RF窗口的涂层，以减弱多导效应并降低电导率。为了测试薄膜性能，在RF陶瓷窗口上涂覆了8 nm TiN薄膜。低功率测量表明，在100 MHz的频率内，RF陶瓷窗口上的8 nm薄膜对其传输特性的影响可以忽略不计。8 kW射频功率测试表明，薄膜涂层可以显着改善功率传输，抗多重性和射频窗口的稳定性。