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Investigation of TiN film on an RF ceramic window by atomic layer deposition
Journal of Vacuum Science & Technology A ( IF 2.4 ) Pub Date : 2020-07-23 , DOI: 10.1116/6.0000159
Zhen Peng 1, 2 , Gen Chen 1 , Yan-Ping Zhao 1 , Xin Zhang 1 , Yun-Tao Song 1, 2 , Grigori Shirkov 3 , Galina Karamysheva 3 , Oleg Karamyshev 3 , Luciano Calabretta 4 , Antonio Caruso 4
Affiliation  

To reduce the secondary emission yield of an RF window ceramic so as to suppress the occurrence of a multipactor, we propose coating the window with a titanium nitride (TiN) film by atomic layer deposition. We investigate two groups of samples with film thicknesses of 56 and 8 nm, respectively, to analyze the composition and optimize the coating thickness of the TiN film on the ceramic. For the first group of samples (56 nm films), x-ray photoelectron spectroscopy (XPS) results show that the film can be divided into three mixed layers: a top layer composed of TiOxNy and TiO2; a middle layer consisting of TiN, TiOxNy, TiO2, and TiC; and a bottom layer called a diffusion layer, formed by decreasing TiN, TiOxNy, TiO2, TiC, and increasing A l 2 O 3 as the ceramic is approached. The depth of this bottom layer is ∼8 nm. Two more films (8 nm films) in the second group of samples were grown on a 96 ceramic and silicon to determine the sheet resistance, those on silicon is ∼1 kΩ/□ as measured by spectroscopic ellipsometry. According to the XPS results of the two 8 nm films, the content of TiOxNy and TiO2 increased while TiN content decreased in the film on 96 ceramic, compared to the film on silicon. Therefore, the 8 nm film is suitable for use as a coating for the RF window to weaken the multipactor effect and lower conductivity. To test the film performance, an RF ceramic window is coated with an 8 nm TiN film. Low-power measurements show that, within a frequency of 100 MHz, the 8 nm film on the RF ceramic window has a negligible effect on its transmission characteristics. 8 kW RF power tests indicate that the film coating can significantly improve the power transmission, anti-multipaction, and stability of the RF window.

中文翻译:

通过原子层沉积研究RF陶瓷窗口上的TiN膜

为了降低RF窗口陶瓷的二次发射率,从而抑制多引线的出现,我们建议通过原子层沉积在窗口上涂一层氮化钛(TiN)膜。我们研究了两组样品,其膜厚分别为56 nm和8 nm,以分析其成分并优化TiN膜在陶瓷上的涂层厚度。对于第一组样品(56 nm薄膜),X射线光电子能谱(XPS)结果表明该薄膜可分为三层混合层:一层由TiO x N y和TiO 2组成的顶层;另一层由TiO x N y和TiO 2组成。由TiN,TiO x N y,TiO 2组成的中间层和TiC; 通过降低TiN,TiO x N y,TiO 2,TiC并增加而形成的称为扩散层的底层 一种 2 Ø 3随着陶瓷的接近。该底层的深度为〜8nm。第二组样品中的另外两层膜(8 nm膜)在96陶瓷和硅上生长,以确定薄层电阻,通过光谱椭偏法测得,硅上的薄膜电阻约为1kΩ/□。根据两张8 nm薄膜的XPS结果,TiO x N y和TiO 2的含量与硅膜相比,在96陶瓷膜上TiN含量增加,而TiN含量减少。因此,该8 nm膜适合用作RF窗口的涂层,以减弱多导效应并降低电导率。为了测试薄膜性能,在RF陶瓷窗口上涂覆了8 nm TiN薄膜。低功率测量表明,在100 MHz的频率内,RF陶瓷窗口上的8 nm薄膜对其传输特性的影响可以忽略不计。8 kW射频功率测试表明,薄膜涂层可以显着改善功率传输,抗多重性和射频窗口的稳定性。
更新日期:2020-09-10
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