Vanadium dioxide (VO₂) thin films were deposited by atomic layer deposition (ALD) using a tetrakis(ethylmethylamino) vanadium precursor and an H₂O oxidant at a temperature of 150 °C. Optimization of postdeposition annealing results in smooth, continuous VO₂ films (thickness, t ∼ 30 nm) with small grains, exhibiting a transition from semiconducting to metal phase, typically known as the metal-insulator transition (MIT), at ∼72 °C with a switching ratio of ∼10². Such films were produced with high repeatability on a wafer scale and have been successfully utilized in resistively coupled oscillators and self-selected resistive devices. Under a smaller process window, thin films (t ∼ 30 nm) with very large grains have also been produced, exhibiting the MIT ratio of ∼10³, which is the highest achieved for the ALD VO₂ films deposited on SiO₂ substrates. Both types of films were characterized again after 120 days to access their stability in air, a property that was rarely investigated.

中文翻译：

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以四（乙基甲基氨基）钒为前驱体制备原子层沉积的二氧化钒薄膜

使用四（乙基甲基氨基）钒前体和H ₂ O氧化剂在150°C的条件下通过原子层沉积（ALD）沉积二氧化钒（VO ₂）薄膜。在平滑，连续的VO沉积后退火的结果的优化_2层膜（厚度，吨 〜30nm）的具有小的晶粒，显示出从半导体至金属相，通常被称为金属-绝缘体转变（MIT）的过渡，在〜72℃下开关比约为10 ²。这样的膜以晶片级的高重复性生产，并已成功地用于电阻耦合振荡器和自选电阻器件。下一个更小的处理窗口，薄膜（吨 还产生了非常大的晶粒（约30 nm），其MIT比为〜10 ³，这是在SiO ₂衬底上沉积的ALD VO ₂膜的最高值。两种类型的薄膜在120天后都可以再次表征，以获取其在空气中的稳定性，这一性质很少被研究。