Atomic/molecular layer deposition (ALD/MLD) is strongly emerging as the state-of-the-art gas-phase fabrication technique for novel functional inorganic-organic thin-film materials. In the actual ALD/MLD process development, selecting the proper sublimation temperatures for the inorganic and organic precursors is an important task. In particular, the latter ones tend to require higher sublimation temperatures. In this work, we systematically investigate a representative set of most common ALD/MLD organic precursors using low-pressure (4 mbar) thermogravimetric (TG) analysis. The onset temperature (TG_onset) where the weight loss starts is found to well foretell us the optimal precursor source temperature (T_MLD) for ALD/MLD; typically, the T_MLD value used in a practical ALD/MLD experiment is lower by approximately 14% than the TG_onset value. Moreover, we discuss the possibility to utilize the melting point of the compound as a starting point if such vacuum TG measurements are not available.

中文翻译：

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用于在原子/分子层沉积中寻找有机前体的升华温度的低压热重分析

原子/分子层沉积（ALD / MLD）作为用于新型功能性无机有机薄膜材料的最新气相制备技术正在迅速兴起。在实际的ALD / MLD工艺开发中，为无机和有机前体选择合适的升华温度是一项重要的任务。特别地，后者往往需要更高的升华温度。在这项工作中，我们使用低压（4 mbar）热重（TG）分析系统地研究了一组最常见的ALD / MLD有机前体。发现开始减肥的起始温度（TG_起始）可以很好地预示我们对于ALD / MLD的最佳前驱体源温度（T _MLD）。通常，T _MLD在实际的ALD / MLD实验中使用的值是由比TG大约14％较低的_发病值。此外，我们讨论了在无法进行此类真空TG测量的情况下，以化合物的熔点为起点的可能性。