Atmospheric-pressure spatial atomic layer deposition (AP-SALD) and atmospheric-pressure spatial chemical vapor deposition (AP-SCVD) are rapid, open-air techniques for the deposition of conformal, pinhole-free films over large areas. In this work, a precursor nebulizer and an ozone generator are incorporated into an AP-SALD system to enable the deposition of tungsten oxide (WO₃) films by AP-SCVD. The precursors bis(t-butylimido) bis(dimethylamino) tungsten(VI) and ozone are used with a film deposition temperature of 350 °C to achieve a growth per cycle of 1.2 Å/cycle. A bandgap of 3.26 eV and a refractive index of 2.36 were obtained, consistent with the previous reports for WO₃ films. The pinhole-free films were found to be a mixture of hexagonal and monoclinic WO₃, with an increasing monoclinic nature after annealing. Additionally, the as-deposited film was substoichiometric with an O/W ratio of 2.3, which increased to 2.36 after annealing at 450 °C. The successful open-air deposition of tungsten oxide via the incorporation of a precursor nebulizer and ozone generator paves the way for large-area deposition of tungsten oxide for commercial applications.

中文翻译：

---

氧化钨的大气压空间化学气相沉积

大气压空间原子层沉积（AP-SALD）和大气压空间化学气相沉积（AP-SCVD）是一种快速的露天技术，用于在大面积区域上沉积保形，无针孔的薄膜。在这项工作中，将前驱雾化器和臭氧发生器合并到AP-SALD系统中，以通过AP-SCVD沉积氧化钨（WO ₃）膜。使用前驱体双（叔丁基亚氨基）双（二甲基氨基）钨（VI）和臭氧，膜沉积温度为350°C，以使每个周期的生长达到1.2Å/周期。获得了3.26eV的带隙和2.36的折射率，这与WO ₃膜的先前报道一致。发现无针孔的薄膜是六方晶系和单斜晶系WO ₃的混合物，退火后单斜性增加。另外，所沉积的膜是亚化学计量的，O / W比为2.3，在450℃下退火后增加至2.36。通过结合使用前体雾化器和臭氧发生器成功地在露天沉积氧化钨，为大面积沉积氧化钨铺平了道路，为商业应用铺平了道路。