The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic properties makes it difficult for devices to stand out. Here, we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake. Vanadium dioxide is a classical semiconductor with a narrow bandgap, a high temperature coefficient of resistance, and phase transformation. Molybdenum ditelluride, a typical two-dimensional material, is often used to construct optoelectronic devices. The heterostructure can realize three different functional modes: (i) the p–n junction exhibits ultrasensitive detection (450 nm–2 μm) with a dark current down to 0.2 pA and a response time of 17 μs, (ii) the Schottky junction works stably under extreme conditions such as a high temperature of 400 K, and (iii) the bolometer shows ultrabroad spectrum detection exceeding 10 μm. The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation (LWIR). This type of photodetector combines versatile detection modes, shedding light on the hybrid application of novel and traditional materials, and is a prototype of advanced optoelectronic devices.

具有奇特结构和优异能带特性的低维材料的出现为光电探测器的发展提供了新的规范形式。然而，基础属性的利用有限，使得设备很难脱颖而出。在这里，我们展示了一种具有超薄二氧化钒薄膜和二碲化钼纳米片的混合异质结构。二氧化钒是一种经典半导体，具有窄带隙、高电阻温度系数和相变特性。二碲化钼是一种典型的二维材料，常用于构建光电器件。该异质结构可以实现三种不同的功能模式：（i）p-n结表现出超灵敏检测（450 nm-2 μm），暗电流低至0.2 pA，响应时间为17 μs，（ii）肖特基结工作在 400 K 高温等极端条件下也能稳定工作，并且 (iii) 测辐射热计显示出超过 10 μm 的超宽光谱检测。三种模式之间的灵活切换使得异质结构成为从可见光到长波红外辐射（LWIR）的下一代光电探测器的潜在候选者。这种光电探测器结合了多种探测模式，揭示了新型材料与传统材料的混合应用，是先进光电器件的原型。