In this paper, a new Z‐shaped gate TFET structure is proposed with an n+ horizontal pocket insertion beneath the source. The Z‐TFET structure provides higher ON current by 2‐decades as compared to conventional TFET due to the vertical tunneling and presence of HfO₂ gate oxide. Similarly, the ambipolar current reduces by 2‐decades without affecting subthreshold swing (SS) and OFF current significantly. The ON current is further improved by positioning a horizontal pocket layer in the source. The impact of horizontal pocket (HP) concentration and thickness on the analog performance is investigated further using a TCAD device simulator. The simulated results reveal the superiority of the proposed ZHP‐TFET device in terms of ON current (higher by seven times) and average SS (reduces by 13%) as compared to Z‐TFET keeping ambipolar current constant. The ambipolar current can be further reduced by optimizing the length of the back gate. Thus, the proposed device is capable of providing higher I_ON/I_OFF (~10¹²), I_ON/I_AMB (~10⁹) ratio, and transconductance with improved average SS of 45 mV/decade.

中文翻译：

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具有水平凹穴的Z形栅极TFET，可改善静电行为

本文提出了一种新的Z形栅极TFET结构，在源极下方有一个n +水平口袋插入。与传统的TFET相比，由于垂直隧穿和HfO _2的存在，Z-TFET结构提供的导通电流比传统的TFET高2倍栅极氧化物。同样，双极性电流减少了两个十分之二，而不会显着影响亚阈值摆幅（SS）和OFF电流。通过在源极中放置一个水平的口袋层，可以进一步改善导通电流。使用TCAD设备模拟器进一步研究了水平腔（HP）浓度和厚度对模拟性能的影响。仿真结果表明，与保持双极性电流恒定的Z-TFET相比，所建议的ZHP-TFET器件在导通电流（高7倍）和平均SS（降低13％）方面具有优势。通过优化背栅的长度，可以进一步降低双极性电流。因此，提出的设备能够提供更高的I _ON / I _OFF（〜10 ¹²），I_ON / I _AMB（〜10 ⁹）比率，跨导平均SS改善为45 mV /十倍。