Heterostructures of 0D/2D materials synergistically combine the advantages of two different materials, and photodetectors (PDs) based on such heterostructures demonstrate superior detection properties as compared to those based on each individual material. Here, a facile solution method is proposed for the fabrication of 0D/2D heterostructures to overcome the limitations of the traditional chemical vapor deposition method. The 0D PbS nanocrystals (NCs) are epitaxially grown from 2D‐PbI₂ nanosheet templates by a simple wet‐chemical sulfuration process. The resulting heterojunction PDs demonstrate wide detection range up to 2000 nm, a fast photoresponse of ≈400 µs, and a specific detectivity of more than 10¹² Jones. The superior device performances are attributed to the underneath PbI₂ layer, which can not only be used as the precursor layer but also help to passivate the defect states of PbS NCs. More importantly, the developed Structured II device with Au–PbI₂ Schottky contact effect can suppress the dark current of PD to extend its depletion region and improve the response speed. Overall, this study demonstrates a novel strategy for the growth of 0D/2D heterostructures in conjunction with fast near‐infrared detection, which surmount the limitations of photoconductive detectors in terms of large‐scale synthesis and response speed.

中文翻译：

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PbI2纳米片模板的PbS纳米晶体的外延生长及其在快速近红外光电探测器中的应用

0D / 2D材料的异质结构协同结合了两种不同材料的优势，与基于每种材料的异质结构相比，基于这种异质结构的光电检测器（PD）具有出众的检测性能。这里，提出了一种用于0D / 2D异质结构制造的简便方法，以克服传统化学气相沉积方法的局限性。通过简单的湿化学硫化工艺，从2D-PbI ₂纳米片模板外延生长0D PbS纳米晶体（NC）。所得的异质结PD表现出高达2000 nm的宽检测范围，约400 µs的快速光响应和超过10 ¹² Jones的比检测率。优异的设备性能归因于下方的PbI₂层不仅可以用作前驱层，而且还可以钝化PbS NC的缺陷状态。更重要的是，开发的具有Au–PbI ₂肖特基接触效应的Structured II器件可以抑制PD的暗电流，以扩展其耗尽区并提高响应速度。总的来说，这项研究表明了一种结合快速近红外检测来生长0D / 2D异质结构的新策略，该策略在大规模合成和响应速度方面克服了光电导检测器的局限性。