In this paper, we have theoretically analyzed two different device structures of green GaN-based LEDs. The proposed structure is comprised of p-InGaN/GaN superlattice instead of EBL and p-GaN of reference LED structure. Therefore, the concentration of electron, holes and radiative recombination are considerably enhanced. Meanwhile, the leakage of electrons from the active zone is decreased. As a result, the efficiency degradation of proposed structure is reduced from ∼65% to ∼12% at 100 A. cm^-2. Similarly, the light output power of the proposed structure is also greatly improved i.e. nearly four times as compared to reference structure.

中文翻译：

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p-InGaN / p-GaN超晶格电子阻挡层的无下垂内部量子效率

在本文中，我们从理论上分析了绿色GaN基LED的两种不同的器件结构。所提出的结构由p-InGaN / GaN超晶格组成，而不是参考LED结构的EBL和p-GaN。因此，电子，空穴和辐射复合的浓度大大提高。同时，减少了电子从有源区的泄漏。结果，所提出的结构的效率下降在100 A. cm ^-2下从〜65％降低到〜12％。类似地，所提出的结构的光输出功率也大大提高，即与参考结构相比几乎提高了四倍。