We carefully analyze in this article, the influence of the interface defect density of the defective surface between crystalline silicon and hydrogenated polymorphous silicon (i-pm-Si:H/n-c-Si) on the current density-voltage (J-V) characteristic of n-type HIT solar cells (ITO/p-a-SiC:H/i-pm-Si:H/n-c-Si/Al). We have also studied the variation of the electrons and holes surface recombination speeds on the front and the back face of the studied cell. The results show that the recombination rate is higher on the front surface of the c-Si wafer when the defect density increases. Indeed, we have found that for the two values of the front contact barrier height at the ITO/p-a-SiC:H, when the interface defect density increases, the Voc and the FF drop. Thus, the efficiency goes from almost 20 to 2 %. These results allow us to conclude that to have a good Voc, the surface of the active layer should be passivated to have a interface defect density less than 10¹¹ cm^-2. For the variation of the surface recombination speed S_nL with the interface defect density for electrons at the back face of the solar cell, no sensitivity is observed. For small values of these defects, the efficiency increases when the holes surface recombination speed S_pL is decreased, but for large values of interface defect density, no improvement is observed, even for low surface recombination speeds.

我们在本文中仔细分析了晶体硅和氢化多晶硅（i-pm-Si：H / nc-Si）之间的缺陷表面的界面缺陷密度对n的电流密度-电压（JV）特性的影响型HIT太阳能电池（ITO / pa-SiC：H / i-pm-Si：H / nc-Si / Al）。我们还研究了所研究电池的正面和背面的电子和空穴表面复合速度的变化。结果表明，当缺陷密度增加时，c-Si晶片的前表面上的复合率更高。实际上，我们已经发现，对于ITO / pa-SiC：H处的前接触势垒高度的两个值，当界面缺陷密度增加时，Voc和FF下降。因此，效率从几乎20％提高到2％。¹¹ 厘米^-2。对于表面复合速度S _nL随太阳能电池背面的电子的界面缺陷密度的变化，未观察到灵敏度。对于这些缺陷的较小值，当孔表面重组速度S _pL降低时效率提高，但是对于较大的界面缺陷密度，即使对于低表面重组速度，也没有观察到改善。