A 0.4-THz on-chip antenna (OCA) is configured with high radiation efficiency and high gain, utilizing standard CMOS process technology. In this design, the back cavity is formed by connecting a top and bottom metal layer, which is connected through the vias, named substrate-integrated-waveguide (SIW). This back cavity finds to suppress the surface wave and separates the radiation towards the low-resistive substrate. The slotted radiator is constructed on the top metal layer that leads to enhance the radiation performance in broadside direction. The projected antenna size of 490 × 450 µm² and shows a 3-dB gain bandwidth of ∼ 39%, a directivity of ∼7.02 dBi, a radiation efficiency of ∼ 87.9 % in the frequency range from 0.380 THz to 0.420 THz. This OCA is suitable for various THz applications in suggested band.

利用标准的CMOS工艺技术，配置了0.4THz的片上天线（OCA），具有高辐射效率和高增益。在这种设计中，后腔是通过连接顶部和底部金属层而形成的，顶部和底部金属层通过通孔连接，称为衬底集成波导（SIW）。该后腔发现抑制了表面波，并使辐射向低电阻衬底分离。开槽辐射器构造在顶部金属层上，从而提高了在宽边方向上的辐射性能。投影天线尺寸为490×450 µm ²，在0.380 THz至0.420 THz的频率范围内，其3-dB增益带宽为〜39％，方向性为〜7.02 dBi，辐射效率为〜87.9％。该OCA适用于建议频段中的各种THz应用。