Abstract Photodetectors (PD) with high detectivity, high quantum efficiency and fast response are fundamental units to achieve sensors, imagers, and many others functional optoelectronics. Here we demonstrate high performance vertical stacked 2D MoS2/CuPc heterojunction based photodetectors with high sensitivity, high external quantum efficiency and ultrafast response time. The functional p-type organic thin film of CuPc was thermally evaporated on n-type two-dimension (2D) MoS2 monolayer to create an ideal type II heterojunction interface, where ultrafast charge transfer (CT) occur in 16 ps, followed by effective exciton separation and charge collection. As a result, photoresponse time as fast as 436 μs has been obtained for 2D MoS2/CuPc PDs, as well as a profound responsivity of 3.0 × 10 3 A/W and a detectivity of 2.0 × 1010 Jones with a peak external quantum efficiency (EQE) of 483%. This work suggests a feasible route to develop ultrasensitive visible light photodetector by 2D materials.

中文翻译：

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基于 2D MoS2/CuPc 异质结的高灵敏度光电探测器通过超快电荷转移

摘要 具有高探测率、高量子效率和快速响应的光电探测器 (PD) 是实现传感器、成像器和许多其他功能光电子学的基本单元。在这里，我们展示了具有高灵敏度、高外部量子效率和超快响应时间的高性能垂直堆叠二维 MoS2/CuPc 异质结光电探测器。CuPc 的功能性 p 型有机薄膜在 n 型二维 (2D) MoS2 单层上热蒸发以创建理想的 II 型异质结界面，其中超快电荷转移 (CT) 在 16 ps 内发生，然后是有效激子分离和收费。因此，2D MoS2/CuPc PD 的光响应时间快至 436 μs，响应度为 3.0 × 10 3 A/W，探测率为 2。0 × 1010 Jones 具有 483% 的峰值外量子效率 (EQE)。这项工作提出了通过二维材料开发超灵敏可见光光电探测器的可行途径。