Abstract Cd1-xEuxS thin films, with x in the 0 ≤ x ≤ 5 at% range, were prepared by chemical bath at 80 °C on glass substrates. X ray diffraction (XRD) patterns reveal that the samples crystallize in cubic zinc blende phase, with high preferred orientation along the (111) direction. From XRD data the (111) interplanar spacing (IS) and average crystal size (CS) were calculated. IS(111) decreases from 0.3350 nm for x = 0.0–0.3346 nm for x = 1.2 at%, then increases from here to the initial value for x = 3.0 at%, after decreases slightly until x = 5.0 at%. CS follows approximately an inverse behavior of that of IS(111) vs x taking values in the 29.0–31.5 nm range. The vibrational mode 1LO hardens when x decreases and softens when x increases following the opposite behavior of IS(111), as is expected, however, 1TO follows an opposite behavior to that of 1LO. The direct optical band gap Eg reduces when x decreases and the contrary when x rises, which is the opposite to commonly observed. Besides, the photoluminescent (PL) energy-emissions exhibit a contrary dependence on x as that followed by Eg, this behavior is associated with the distortion of the host CdS lattice due to the Eu doping. PL signals from m1Dn1 → m2Fn2 transitions of E2+,3+ ions are also affected by the behavior of IS(111). All the experimental results are discussed based on the relation among the different observations, and those results reported in the literature.

中文翻译：

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CdS 晶格中置换和间隙 Eu+3 位的表征

摘要 Cd1-xEuxS 薄膜，x 在 0 ≤ x ≤ 5 at% 范围内，通过化学浴在 80 °C 下在玻璃基板上制备。X 射线衍射 (XRD) 图案显示样品以立方闪锌矿相结晶，沿 (111) 方向具有高择优取向。从XRD数据计算(111)晶面间距(IS)和平均晶体尺寸(CS)。IS(111) 从 0.3350 nm for x = 0.0–0.3346 nm for x = 1.2 at%，然后从这里增加到 x = 3.0 at% 的初始值，然后略微下降直到 x = 5.0 at%。CS 近似遵循 IS(111) 与 x 在 29.0-31.5 nm 范围内取值的相反行为。振动模式 1LO 在 x 减小时变硬，在 x 增加时变软，遵循 IS(111) 的相反行为，然而，正如预期的那样，1TO 的行为与 1LO 的行为相反。当 x 减小时直接光学带隙 Eg 减小，而当 x 升高时相反，这与通常观察到的相反。此外，光致发光 (PL) 能量发射表现出对 x 的相反依赖性，如 Eg 之后的那样，这种行为与由于 Eu 掺杂导致的主 CdS 晶格的畸变有关。来自 E2+,3+ 离子的 m1Dn1 → m2Fn2 跃迁的 PL 信号也受 IS(111) 行为的影响。所有的实验结果都是根据不同观察结果之间的关系讨论的，这些结果在文献中报道。光致发光 (PL) 能量发射表现出对 x 的相反依赖性，如 Eg 之后的那样，这种行为与由于 Eu 掺杂导致的主 CdS 晶格的畸变有关。来自 E2+,3+ 离子的 m1Dn1 → m2Fn2 跃迁的 PL 信号也受 IS(111) 行为的影响。所有的实验结果都是根据不同观察结果之间的关系讨论的，这些结果在文献中报道。光致发光 (PL) 能量发射表现出对 x 的相反依赖，如 Eg 之后的那样，这种行为与由于 Eu 掺杂导致的主 CdS 晶格的畸变有关。来自 E2+,3+ 离子的 m1Dn1 → m2Fn2 跃迁的 PL 信号也受 IS(111) 行为的影响。所有的实验结果都是根据不同观察结果之间的关系讨论的，这些结果在文献中报道。