In this study, we report a substantial improvement in the long-term stability of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a tandem gate insulator composed of silicon dioxide (SiO2) deposited by using atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). Negative-bias temperature instability (NBTI) tests showed that threshold-voltage (ΔVth) shifts were significantly smaller than when only a plasma-enhanced chemical vapor deposition (PECVD) structure was used. We believe that the unique stoichiometric characteristics and the reduction in the interfacial trap density (Dit) produced by the SiO2 gate insulator that had been fabricated using ALD enhanced the long-term stability of the LTPS TFTs. These results suggest a tandem structure gate insulator with high-quality ALD-based SiO2 thin film can provide an important improvement in the characteristics of the p-channel LTPS TFTs required for advanced active matrix organic light-emitting diodes (AMOLEDs) applications.

中文翻译：

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通过使用具有沉积二氧化硅原子层的串联栅极绝缘体提高低温多晶硅薄膜晶体管的长期稳定性

在这项研究中，我们报告了低温多晶硅 (LTPS) 薄膜晶体管 (TFT) 的长期稳定性有了实质性改善，该晶体管具有由使用原子层沉积技术沉积的二氧化硅 (SiO2) 组成的串联栅极绝缘体。 ALD) 和等离子体增强化学气相沉积 (PECVD)。负偏压温度不稳定性 (NBTI) 测试表明，与仅使用等离子体增强化学气相沉积 (PECVD) 结构时相比，阈值电压 (ΔVth) 偏移明显更小。我们相信，独特的化学计量特性和由使用 ALD 制造的 SiO2 栅极绝缘体产生的界面陷阱密度 (Dit) 的降低增强了 LTPS TFT 的长期稳定性。