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Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices
Journal of Computational Electronics ( IF 2.1 ) Pub Date : 2020-05-28 , DOI: 10.1007/s10825-020-01505-6
Duy Hai Doan , Axel Fischer , Jürgen Fuhrmann , Annegret Glitzky , Matthias Liero

We present an electrothermal drift–diffusion model for organic semiconductor devices with Gauss–Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature-dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter–Gummel scheme. Using path-following techniques, we demonstrate that the model exhibits S-shaped current–voltage curves with regions of negative differential resistance, which were only recently observed experimentally.

中文翻译:

有机半导体器件S形电流-电压关系的漂移-扩散模拟

我们用高斯-费米统计和载流子迁移率的正温度反馈提出了一种有机半导体器件的电热漂移-扩散模型。我们将取决于温度的欧姆接触边界条件用于静电势,并通过基于有限体积的广义Scharfetter-Gummel方案离散化系统。使用路径跟踪技术,我们证明该模型显示出S型电流-电压曲线,该曲线具有负的差分电阻区域,这是最近才通过实验观察到的。
更新日期:2020-05-28
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