In this letter, we propose, fabricate, and characterize both an enhancement mode (E-mode) and a depletion mode (D-mode) MOSFET on a standard LED epitaxial wafer based on silicon substrate for the first time. The devices are fabricated on the n-GaN layer or undoped-GaN layer of the LED epitaxial wafer by semiconductor manufacturing techniques. The working mode (E-mode or D-mode) of the device is dependent on the etching depths of the gate recess. The experiments show that the E-mode and D-mode MOSFETs possess a maximum output current density of 0.15 mA mm −1 and 4.6 mA mm −1 under the gate-to-source voltage of 8 V and drain-to-source voltage of 8 V, respectively. It is expected that such E-mode and D-mode MOSFETs achieved on GaN-on-Si LED epitaxial wafer should have potential applications in monolithic optical electronic integrated circuits.

中文翻译：

---

在GaN-on-Si LED外延晶片上实现增强和耗尽型MOSFET

在这封信中，我们首次提出，制造和表征了基于硅衬底的标准LED外延晶片上的增强模式（E模式）和耗尽模式（D模式）MOSFET。通过半导体制造技术将器件制造在LED外延晶片的n-GaN层或未掺杂GaN层上。器件的工作模式（E模式或D模式）取决于栅极凹槽的蚀刻深度。实验表明，E型和D型MOSFET在8 V的栅源电压和漏源电压为8 V的情况下，最大输出电流密度分别为0.15 mA mm -1和4.6 mA mm -1。分别为8V。预期在GaN-on-Si LED外延晶片上实现的此类E模式和D模式MOSFET在单片光学电子集成电路中应具有潜在的应用。