The purpose of this work is to fabricate a Ni/GO-Fe 3 O 4 / n -Si heterojunction device using Mott-Schottky plots and to study the capacitance–voltage/conductance/series resistance characteristics of the device as a function of temperature. We analyzed temperature dependent capacitance–voltage measurements for the Ni/GO-Fe 3 O 4 / n -Si device in the temperature range from 80 to 360 K. Temperature dependent electrical measurements have been performed at a fixed frequency of 500 kHz and frequency dependent ones have been carried out at room temperature. In the reverse bias capacitance–voltage characteristics figure, it has been determined that the barrier height is 1.73 eV (80 K) and 1.50 eV (360 K) with 20 K steps. The impedance analysis measurements have been performed in the reverse and forward biases. The experimental results have shown that the values of capacitance, conductance, interface states and series resistance R s<...

中文翻译：

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Ni /（GO-Fe 3 O 4）/ n -Si异质结器件在宽温度范围内的电容-电压和阻抗谱研究

这项工作的目的是使用Mott-Schottky图制造Ni / GO-Fe 3 O 4 / n -Si异质结器件，并研究该器件的电容-电压/电导/串联电阻特性随温度的变化。我们分析了温度范围为80至360 K的Ni / GO-Fe 3 O 4 / n -Si器件的温度相关电容-电压测量结果。温度相关电测量已在500 kHz固定频率和频率相关条件下进行那些是在室温下进行的。在反向偏置电容-电压特性图中，已确定势垒高度以20 K步长分别为1.73 eV（80 K）和1.50 eV（360 K）。阻抗分析测量已在反向和正向偏置下进行。