Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for both their fundamental physics and applications, the discussion of 2D electron device application to the future integrated circuit is still based on the expectation of the inherently high properties that 2D materials ideally possess. This review article focuses on the gate stack property, which is one of most important building blocks in the field effect transistor. Starting from the comparison of the 2D/SiO2 interface properties with the conventional SiO2/Si interface properties, recent advances in the studies of gate stack properties for bilayer graphene and MoS2 FETs are discussed. In particular, the advantages and disadvantages of the 2D heterostructures with 2D insulator of h-BN are emphasized. This review may provide conceptual and experimental approaches for controlling the 2D heterointerface properties.

中文翻译：

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了解二维异质结构 FET 的界面特性

自从石墨烯首次在基底上从块状石墨中分离以来，已经过去了 15 年。在此期间，已经实现了具有本征带隙的二维层状材料。尽管在基础物理和应用方面已经报道了许多令人兴奋的结果，但关于 2D 电子器件在未来集成电路中的应用的讨论仍然基于对 2D 材料理想地拥有的固有高特性的期望。这篇评论文章重点介绍了栅极堆叠特性，它是场效应晶体管中最重要的构建块之一。从 2D/SiO2 界面特性与传统 SiO2/Si 界面特性的比较开始，讨论了双层石墨烯和 MoS2 FET 栅极堆叠特性研究的最新进展。特别是，强调了 h-BN 具有二维绝缘体的二维异质结构的优缺点。这篇综述可以提供控制二维异质界面特性的概念和实验方法。