Lateral Photovoltage Scanning (LPS) and Scanning Photoluminescence (SPL) methods are used simultaneously to reveal spatial distribution of electrically active defects in crystalline silicon. Defect information can be gained fast by measuring the phase shift between laser modulation and the LPS/SPL signals detected as the real and imaginary parts of the measurement signals. The laser power was varied from 10 μ W to 100 mW at laser wavelengths of 660 nm and 830 nm. Simultaneously detected LPS and SPL signals from one and the same excited spot were used to determine minority charge carrier lifetimes. The signal gathering by two different methods shows a huge benefit to investigate the nature of recombination active defects. The minority carrier lifetime determined by SPL depends on the injection level while the minority lifetime analysed by LPS does not show a similar behaviour. Defect-related charge minority carrier lifetime maps of SPL scans show high similarity to those me...

中文翻译：

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通过扩展的横向光电压扫描和扫描光致发光表征单晶和多晶硅

同时使用横向光电压扫描（LPS）和扫描光致发光（SPL）方法来揭示晶体硅中电活性缺陷的空间分布。通过测量激光调制和LPS / SPL信号之间的相移，可以快速获得缺陷信息，LPS / SPL信号被检测为测量信号的实部和虚部。在660 nm和830 nm的激光波长下，激光功率从10μW到100 mW不等。同时从一个激励点和同一激励点检测到的LPS和SPL信号用于确定少数载流子寿命。通过两种不同的方法收集信号显示出研究重组活性缺陷的性质的巨大益处。SPL确定的少数载流子寿命取决于注入水平，而LPS分析的少数载流子寿命没有类似的表现。SPL扫描的与缺陷相关的电荷少数载流子寿命图显示了与这些缺陷极高的相似性...