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Redox-active Eu2O3 nanoflakes as a buffer layer for inverted CsPbI2Br perovskite solar cells with enhanced performance
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-09-09 , DOI: 10.1039/d0tc03345f
Siwei Yi 1, 2, 3, 4, 5 , Dongwei Han 1, 2, 3, 4, 5 , Quan Yuan 1, 2, 3, 4, 5 , Qifeng Yang 1, 2, 3, 4, 5 , Yang Yang 1, 2, 3, 4, 5 , Dong-Ying Zhou 1, 2, 3, 4, 5 , Lai Feng 1, 2, 3, 4, 5
Affiliation  

Solution processed CsPbX3 films usually present a high content of Pb0 clusters, acting as significant defects on the perovskite surface. Conventional electron transport materials, including PC61BM, TiO2, ZnO, SnO2 and Nb2O5, can hardly passivate these defects. In this work, few-layered Eu2O3 nanoflakes (nano-Eu2O3) are prepared, which exhibit much higher redox activity towards Pb0/I0 than the commercial Eu2O3 powder. When nano-Eu2O3 is introduced as the buffer layer between the CsPbI2Br and PC61BM layers in inverted perovskite solar cells (PeSC), the devices deliver remarkably improved photovoltaic performance with an average power conversion efficiency (PCE) of 13.47% and a champion PCE of 14.09%, which is much superior to the control devices without nano-Eu2O3 (9.74/11.03%). A series of mechanism studies reveal that the addition of nano-Eu2O3 buffer layer enables not only more efficient hole-blocking but also remarkably enhanced defect passivation at the perovskite/PC61BM interface, both of which result in significantly reduced interfacial charge recombination. Besides, we show that the devices with nano-Eu2O3 exhibit obviously improved thermal stability with >90% PCE remaining after 400 h of thermal aging at 80 °C.

中文翻译:

具有氧化还原活性的Eu2O3纳米薄片作为性能增强的倒置CsPbI2Br钙钛矿太阳能电池的缓冲层

溶液处理的CsPbX 3薄膜通常呈现高含量的Pb 0团簇,在钙钛矿表面上表现为明显的缺陷。包括PC 61 BM,TiO 2,ZnO,SnO 2和Nb 2 O 5在内的常规电子传输材料几乎不能钝化这些缺陷。在这项工作中,制备了几层的Eu 2 O 3纳米薄片(纳米Eu 2 O 3),其对Pb 0 / I 0的氧化还原活性比商业Eu 2 O 3粉末高得多。当nano-eu 2在倒钙钛矿太阳能电池(PeSC)中,O 3被引入作为CsPbI 2 Br和PC 61 BM层之间的缓冲层,这些器件可显着提高光伏性能,平均功率转换效率(PCE)为13.47%,并具有出色的PCE比例为14.09%,远优于不含纳米Eu 2 O 3的控制设备(9.74 / 11.03%)。一系列机理研究表明,添加纳米Eu 2 O 3缓冲层不仅可以更有效地阻止空穴,而且可以显着增强钙钛矿/ PC 61处的缺陷钝化。BM界面,这两者都会导致界面电荷重组显着降低。此外,我们表明具有纳米Eu 2 O 3的器件在80°C的热老化400 h后具有明显改善的热稳定性,PCE保留> 90%。
更新日期:2020-10-16
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