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Symmetric Linear Rise and Fall of Conductance in a Trilayer Stack Engineered ReRAM-Based Synapse
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-09 , DOI: 10.1021/acsaelm.0c00585
Kavita Vishwakarma 1 , Rishabh Kishore 1 , Arnab Datta 1
Affiliation  

Tapered conductive filament is crucial to safeguard the ideal symmetric linear variation in conductance during learning (potentiation) and forgetting (depression) phases in a neuromorphic synapse, electrically realized with resistive random access memory (ReRAM) cell. Here, we have demonstrated that, by engineering the spatial location of an AlOx intermediate layer in a trilayer ReRAM stack having ZrOx/AlOx/HfOx in a fixed total stack thickness, oxygen vacancies can be nonuniformly distributed, and as a result, an appropriate taper structure of the filament can be realized. Furthermore, spatial location of the AlOx layer in the trilayer stack determines the amount of leakage in the off state of the cell and hence its read current margin between the different conducting states. A remarkable conductance linearity with symmetry was obtained by input pulsing to a favorable ReRAM cell, while improvement in its characteristics was found because of its tapered filament structure and low leakage current resulted due to the farthest AlOx layer in stack with respect to the top electrode than the remaining cells.

中文翻译:

三层堆栈设计的基于ReRAM的突触中电导的对称线性上升和下降

锥形导电丝对于在神经形态突触中通过电抗性随机存取存储器(ReRAM)单元实现的学习(增强)和遗忘(抑郁)阶段中电导的理想对称线性变化至关重要,这一点至关重要。在这里,我们证明了,通过设计三层ReRAM堆栈中AlO x中间层的空间位置,该堆栈具有固定总堆栈厚度的ZrO x / AlO x / HfO x,氧空位可以不均匀地分布,结果,可以实现长丝的适当的锥形结构。此外,AlO x的空间位置三层堆叠中的第一层决定了单元关闭状态下的泄漏量,因此决定了其在不同导电状态之间的读取电流裕度。通过对良好的ReRAM单元进行输入脉冲,获得了具有对称性的卓越电导线性度,同时由于其锥形细丝结构和相对于顶部电极的堆叠中最远的AlO x层而导致的低漏电流,其性能得到了改善比剩下的细胞。
更新日期:2020-10-28
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