Symmetric Linear Rise and Fall of Conductance in a Trilayer Stack Engineered ReRAM-Based Synapse,ACS Applied Electronic Materials

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Symmetric Linear Rise and Fall of Conductance in a Trilayer Stack Engineered ReRAM-Based Synapse
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-09-09 , DOI: 10.1021/acsaelm.0c00585
Kavita Vishwakarma ₁ , Rishabh Kishore ₁ , Arnab Datta ₁

Affiliation

Tapered conductive filament is crucial to safeguard the ideal symmetric linear variation in conductance during learning (potentiation) and forgetting (depression) phases in a neuromorphic synapse, electrically realized with resistive random access memory (ReRAM) cell. Here, we have demonstrated that, by engineering the spatial location of an AlO_x intermediate layer in a trilayer ReRAM stack having ZrO_x/AlO_x/HfO_x in a fixed total stack thickness, oxygen vacancies can be nonuniformly distributed, and as a result, an appropriate taper structure of the filament can be realized. Furthermore, spatial location of the AlO_x layer in the trilayer stack determines the amount of leakage in the off state of the cell and hence its read current margin between the different conducting states. A remarkable conductance linearity with symmetry was obtained by input pulsing to a favorable ReRAM cell, while improvement in its characteristics was found because of its tapered filament structure and low leakage current resulted due to the farthest AlO_x layer in stack with respect to the top electrode than the remaining cells.

中文翻译：

三层堆栈设计的基于ReRAM的突触中电导的对称线性上升和下降

锥形导电丝对于在神经形态突触中通过电抗性随机存取存储器（ReRAM）单元实现的学习（增强）和遗忘（抑郁）阶段中电导的理想对称线性变化至关重要，这一点至关重要。在这里，我们证明了，通过设计三层ReRAM堆栈中AlO _x中间层的空间位置，该堆栈具有固定总堆栈厚度的ZrO _x / AlO _x / HfO _x，氧空位可以不均匀地分布，结果，可以实现长丝的适当的锥形结构。此外，AlO _x的空间位置三层堆叠中的第一层决定了单元关闭状态下的泄漏量，因此决定了其在不同导电状态之间的读取电流裕度。通过对良好的ReRAM单元进行输入脉冲，获得了具有对称性的卓越电导线性度，同时由于其锥形细丝结构和相对于顶部电极的堆叠中最远的AlO _x层而导致的低漏电流，其性能得到了改善比剩下的细胞。

更新日期：2020-10-28

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