Abstract ZnO thin films were synthesized from precursors of different concentrations via aerosol assisted chemical vapour deposition (AACVD) on glass substrates at 400 °C and were sintered in vacuum at 500 °C . The effect of the precursor concentration and vacuum sintering on the film growth and optoelectronic properties was investigated. With the precursor concentration increasing, the films grew preferentially along the (002) plane at 0.1 M precursor and then became fully polycrystalline. From images of scanning electron microscopy (SEM), it can be observed that the grain size became larger but simultaneously the particles were physically separate. The lowest electrical resistivity (6.38 Ω cm) was gained at films of (002) preferred orientation and the optical transparency in the visible light range was as high as 82.5%. After sintering, the resistivity of both 0.05 and 0.1 M thin films decreased to 19.04 and 2.28 Ωcm , respectively whist the transparency almost remained unchanged. The improvement of electrical property could be attributed to the better crystallinity and the enlarged grain size, which significantly reduced the scattering of grain boundaries to free electrons.

中文翻译：

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前驱体浓度和烧结对气溶胶辅助化学气相沉积 (AACVD) 沉积的 ZnO 薄膜功能特性的影响

摘要 ZnO 薄膜是由不同浓度的前驱体通过气溶胶辅助化学气相沉积 (AACVD) 在 400 °C 的玻璃基板上合成的，并在 500 °C 下真空烧结。研究了前驱体浓度和真空烧结对薄膜生长和光电性能的影响。随着前驱体浓度的增加，薄膜优先沿 (002) 面在 0.1 M 前驱体处生长，然后变成完全多晶。从扫描电子显微镜 (SEM) 的图像中，可以观察到晶粒尺寸变大，但同时颗粒在物理上分离。在 (002) 择优取向的薄膜中获得最低电阻率 (6.38 Ω cm)，可见光范围内的光学透明度高达 82.5%。烧结后，0.05 和 0.1 M 薄膜的电阻率分别降低到 19.04 和 2.28 Ωcm ，而透明度几乎保持不变。电性能的改善可归因于更好的结晶度和更大的晶粒尺寸，这显着减少了晶界对自由电子的散射。