Abstract A ternary MoS2/g-C3N4/PAN heterostructure photocatalyst was synthesized via high temperature calcination and electrospining process. The photocatalytic tests results indicated that the obtained MoS2/g-C3N4/PAN products exhibited enhanced photocatalytic activity. Compared with M-MoS2/g-C3N4/PAN, g-C3N4/PAN and bulk MoS2/g-C3N4, the 1.9%-MoS2/g-C3N4/PAN sample exhibited the highest photocatalytic activity, and the degradation rate for RhB was about 3.6 times higher than that of bulk g-C3N4. The enhanced photocatalytic activity of 1.9%-MoS2/g-C3N4/PAN sample was mainly attributed to the formation of heterostructure between MoS2 and g-C3N4, which effectively suppressed the recombination of photogenerated charge carriers. Moreover, the one-dimensional mats structures of PAN nanofibers films made the composites more easily to reuse and recycle. Hence, this work can provide a good method for the design and preparation of novel visible-light-driven photocatalysts.

中文翻译：

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通过静电纺丝工艺提高嵌入PAN骨架中的异质结构MoS2/g-C3N4的光催化性能

摘要 采用高温煅烧和静电纺丝工艺合成了三元MoS2/g-C3N4/PAN异质结构光催化剂。光催化测试结果表明，得到的 MoS2/g-C3N4/PAN 产物表现出增强的光催化活性。与 M-MoS2/g-C3N4/PAN、g-C3N4/PAN 和块体 MoS2/g-C3N4 相比，1.9%-MoS2/g-C3N4/PAN 样品表现出最高的光催化活性，对 RhB 的降解速率为比块体 g-C3N4 高约 3.6 倍。1.9%-MoS2/g-C3N4/PAN样品的光催化活性增强主要归因于MoS2和g-C3N4之间形成异质结构，有效抑制了光生载流子的复合。此外，PAN纳米纤维薄膜的一维垫结构使复合材料更容易重复使用和回收。