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Structural Features of the Surface Region of the CdS/por-Si/p-Si Heterostructure with a Porous Silicon Film Formed by Metal-Assisted Chemical Etching
Bulletin of the Lebedev Physics Institute ( IF 0.6 ) Pub Date : 2020-09-09 , DOI: 10.3103/s1068335620070040 N. N. Melnik , V. V. Tregulov , N. B. Rybin , N. V. Rybina
中文翻译:
金属辅助化学刻蚀形成多孔硅膜的CdS / por-Si / p-Si异质结构表面区域的结构特征
更新日期:2020-09-10
Bulletin of the Lebedev Physics Institute ( IF 0.6 ) Pub Date : 2020-09-09 , DOI: 10.3103/s1068335620070040 N. N. Melnik , V. V. Tregulov , N. B. Rybin , N. V. Rybina
Abstract
The surface region of the CdS/por-Si/p-Si heterostructure in which the porous layer was formed by metal-assisted etching of the single-crystal p-Si substrate is studied by scanning electron microscopy and Raman spectroscopy methods. Experimental results of the CdS film morphology study are processed using two-dimensional detrended fluctuation analysis and average mutual information methods. It is shown that the porous layer has a significant effect on structural features of the CdS film.
中文翻译:
金属辅助化学刻蚀形成多孔硅膜的CdS / por-Si / p-Si异质结构表面区域的结构特征
摘要
通过扫描电子显微镜和拉曼光谱法研究了CdS / por-Si / p-Si异质结构的表面区域,其中通过金属辅助蚀刻单晶p-Si衬底形成了多孔层。使用二维去趋势波动分析和平均互信息方法处理CdS膜形态研究的实验结果。已经表明,多孔层对CdS膜的结构特征具有显着影响。