Magnetic nickel ferrite (NFO), NiFe 2 O 4 , thin films were fabricated using the chemical solution deposition method on (100)-oriented silicon substrates. The effects of an annealing process on the crystallization and magnetic properties of NFO thin films were investigated. Two annealing methods were used, namely layer-by-layer multiple rapid-annealing process and single slow-annealing process. The results showed that the appropriate pyrolysis temperatures range from 400 to 500°C. NFO thin films crystallized well when they were annealed at 750°C or above. The NFO thin films fabricated using the single slow-annealing process (NFO-S) show better crystallinity compared to the films fabricated using the layer-by-layer multiple rapid-annealing process (NFO-R) when the annealing temperatures were low. NFO-R thin films show preferred (400) orientation growth and the relative intensity of the (400) peak raises with the annealing heating rate. Fine magnetic hysteresis loops and good magnetic properties were observed in both NFO-S and NFO-R thin films. A saturation magnetization of 277 emu cm −3 was derived for the NFO-S thin films, compared to a 230 emu cm −3 for the NFO-R thin films, which is a very high value compared with former reported values for NFO thin films.

中文翻译：

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退火工艺对镍铁氧体薄膜结晶和磁性能的影响

磁性镍铁氧体 (NFO)、NiFe 2 O 4 薄膜使用化学溶液沉积方法在 (100) 取向的硅衬底上制造。研究了退火工艺对 NFO 薄膜的结晶和磁性能的影响。使用了两种退火方法，即逐层多次快速退火工艺和单次慢退火工艺。结果表明，合适的热解温度范围为 400 至 500°C。NFO 薄膜在 750°C 或更高温度下退火时结晶良好。当退火温度较低时，与使用逐层多次快速退火工艺 (NFO-R) 制造的薄膜相比，使用单次慢速退火工艺 (NFO-S) 制造的 NFO 薄膜显示出更好的结晶度。NFO-R 薄膜显示出优选的 (400) 取向生长并且 (400) 峰的相对强度随着退火加热速率的增加而升高。在 NFO-S 和 NFO-R 薄膜中都观察到了精细的磁滞回线和良好的磁性能。NFO-S 薄膜的饱和磁化强度为 277 emu cm -3，而 NFO-R 薄膜的饱和磁化强度为 230 emu cm -3，与之前报道的 NFO 薄膜值相比，这是一个非常高的值.