当前位置: X-MOL 学术Bull. Mater. Sci. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Negative capacitance effect of Cu–TiC thin film deposited by DC magnetron plasma
Bulletin of Materials Science ( IF 1.9 ) Pub Date : 2020-09-09 , DOI: 10.1007/s12034-020-02234-z
Avishek Roy , Arun Kumar Mukhopadhyay , Mukul Gupta , Abhijit Majumdar

The quest for low power consumption devices with new functionalities has made the negative capacitance (NC) effect, the most captivating and studied phenomenon. The NC effect is observed in Cu–TiC thin film at a low-frequency range between 112.9 Hz and 2 kHz. The Cu–TiC thin film was deposited on Si (100) substrate by DC magnetron co-sputtering process and then annealed in a vacuum at different temperatures (100–600°C). The magnitude of NC increased from −0.016 to −27.5 µF after annealing. The NC behaviour is also observed in the forward biased region of the capacitance–voltage ( C – V ) characteristics. The current–voltage ( I – V ) characteristics reveal the decreasing static and dynamic resistance for higher annealed films. An improved electrical conductivity (27.70 × 10 3 to 384.62 × 10 3 S m −1 ) is evidenced with decreasing ideality factor (2.01–0.55) in the post-annealed films. The films were found to be polycrystalline from X-ray diffraction patterns with Cu and TiC phases. Raman studies have also confirmed the presence of Cu and TiC vibrational modes in all films. The intensity of C peaks detected at 1359 cm −1 (D peak) and at 1590 cm −1 (G peak) in the as-deposited film decreased after annealing. The annealing effect reduced the amount of unreacted carbon and contributed to form stoichiometric TiC from non-stoichiometric TiC.

中文翻译:

直流磁控管等离子体沉积Cu-TiC薄膜的负电容效应

对具有新功能的低功耗设备的追求使负电容 (NC) 效应成为最吸引人和研究的现象。在 112.9 Hz 和 2 kHz 之间的低频范围内,在 Cu-TiC 薄膜中观察到 NC 效应。Cu-TiC薄膜通过直流磁控共溅射工艺沉积在Si(100)衬底上,然后在真空中在不同温度(100-600°C)下退火。NC 的幅度在退火后从 -0.016 增加到 -27.5 µF。在电容-电压 (C-V) 特性的正向偏置区域中也观察到 NC 行为。电流-电压 ( I – V ) 特性揭示了更高退火膜的静态和动态电阻降低。改进的导电性(27.70 × 10 3 至 384. 62 × 10 3 S m -1 ) 在退火后的薄膜中随着理想因子 (2.01–0.55) 的降低而得到证明。从 X 射线衍射图发现薄膜是多晶的,具有 Cu 和 TiC 相。拉曼研究还证实了所有薄膜中都存在 Cu 和 TiC 振动模式。退火后,在沉积膜中在 1359 cm -1 (D 峰)和 1590 cm -1 (G 峰)处检测到的 C 峰强度降低。退火效应减少了未反应的碳量,并有助于从非化学计量的 TiC 形成化学计量的 TiC。退火后,在沉积膜中在 1359 cm -1 (D 峰)和 1590 cm -1 (G 峰)处检测到的 C 峰强度降低。退火效应减少了未反应的碳量,并有助于从非化学计量的 TiC 形成化学计量的 TiC。退火后,在沉积膜中在 1359 cm -1 (D 峰)和 1590 cm -1 (G 峰)处检测到的 C 峰强度降低。退火效应减少了未反应的碳量,并有助于从非化学计量的 TiC 形成化学计量的 TiC。
更新日期:2020-09-09
down
wechat
bug