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Investigation of p-type SnO films served as a potential hole-transporting material for highly efficient perovskite solar cells
Journal of Physics D: Applied Physics ( IF 3.4 ) Pub Date : 2020-09-07 , DOI: 10.1088/1361-6463/abae33
Ling Pan 1 , Ping Liu 2 , Saad Ullah 1 , Jiaming Wang 1 , Peixin Yang 1 , Linlin Liu 1 , Shi-E Yang 1 , Haizhong Guo 1 , Tianyu Xia 1 , Yongsheng Chen 1
Affiliation  

As an essential component of perovskite solar cells (PSCs), the design of hole transport materials (HTMs) has always been a topic of interest in the photovoltaic community. In this work, p-type tin monoxide (SnO) films are grown by electron beam evaporation to investigate the influence of substrate temperature and deposition time on their properties. The film crystallization and preferred growth orientation of (001) showed prominent enhancement with the increase in substrate temperature. The prolongation of deposition time witnessed changes in grain morphology from nanoparticles to nanosheets. Hall measurements revealed that the film deposited at 200 °C showed the lowest resistivity, the maximum carrier concentration, and the lowest carrier mobility. Using these films as HTMs, the performance of PSCs based on caesium lead iodide perovskites (CsPbI 3 ) was analyzed theoretically and experimentally, and high open-circuit voltage (V OC ) of 1.16 V is obtained. Wit...

中文翻译:

研究p型SnO薄膜作为高效钙钛矿太阳能电池潜在的空穴传输材料

作为钙钛矿太阳能电池(PSC)的重要组成部分,空穴传输材料(HTM)的设计一直是光伏界关注的话题。在这项工作中,通过电子束蒸发来生长p型一氧化锡(SnO)膜,以研究衬底温度和沉积时间对其性能的影响。(001)的膜结晶和优选的生长取向随着基板温度的升高而显着增强。沉积时间的延长见证了从纳米颗粒到纳米片的晶粒形态的变化。霍尔测量表明,在200°C下沉积的薄膜显示出最低的电阻率,最大的载流子浓度和最低的载流子迁移率。将这些电影用作HTM,在理论和实验上分析了基于碘化铯碘化铯钙钛矿(CsPbI 3)的PSC的性能,并获得了1.16 V的高开路电压(V OC)。机智...
更新日期:2020-09-08
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