In this work, high-performance solar-blind photodetectors based on MXenes– β -Ga 2 O 3 Schottky junctions have been developed by utilizing transparent conductive MXenes as the Schottky electrode of β -Ga 2 O 3 . Due to the high MXenes– β -Ga 2 O 3 Schottky barrier, the photodetectors exhibit a rectification ratio as high as over 10 3 at ±2 V. At zero bias, the photodiodes show a responsivity of 12.2 mA W −1 at 248 nm and a detectivity of 6.1 × 10 12 Jones, which are among the best values for β -Ga 2 O 3 -based solar-blind photodetectors working at zero bias. In addition, the Schottky photodiodes show a fast response speed with a rise time of 8 μ s and decay time of 131 μ s. Our results indicate that MXenes may be promising candidate for use as transparent conductive electrodes for UV optoelectronics.

中文翻译：

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基于MXenes–β -Ga 2 O 3肖特基结的日盲光电探测器

在这项工作中，通过利用透明导电MXenes作为β-Ga2 O 3的肖特基电极，开发了基于MXenes-β-Ga2 O 3肖特基结的高性能日盲光电探测器。由于具有较高的MXenes–β -Ga 2 O 3肖特基势垒，因此光电探测器在±2 V时的整流比高达10 3以上。在零偏压下，光电二极管在248 nm时的响应度为12.2 mA W -1探测效率为6.1×10 12 Jones，这是在零偏压下工作的基于β-Ga 2 O 3的日盲型光电探测器的最佳值。此外，肖特基光电二极管显示出快速的响应速度，上升时间为8 s，衰减时间为131 s。我们的结果表明，MXenes有望用作紫外线光电透明导电电极。