With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

中文翻译：

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基于第IV组和胶体半导体的集成光电探测器：现状。

为了利用微电子领域的现有技术，光电探测器应采用与其兼容的材料来实现，同时确保良好的性能。尽管人们一直在努力寻找可以提高性能的新材料，但是基于它们的光电探测器（PD）往往价格昂贵，并且难以与微电子的标准技术集成。由于这个原因，现将IV族半导体（目前是电子和光电子器件制造的主要材料）在光感测中的应用进行综述。而且，作为与现有制造技术兼容的新材料，基于胶体半导体的PD被修订。这项工作特别关注过去5-10年中该领域的发展，