Abstract We demonstrate a dimethyl ketone treatment for structural modification of cross-linked poly(4-vinylphenol) (c-PVP) gate insulator in pentacene thin-film transistors (TFTs). Here, the dimethyl ketone treatment was performed immediately after spin-coating the insulator solution, followed by thermal annealing for cross-linking of PVP molecules. It is found that the dimethyl ketone treatment lowered the surface energy of the PVP gate insulator and made the PVP film thinner. The results of X-ray diffraction and atomic force microscopy analyses showed that the dimethyl ketone-treated c-PVP insulator contributes to enhancing the crystallinity of pentacene semiconductor films and reducing the density of lamellar grains and bulk phase crystallites in pentacene films. Consequently, the performance improvement of the pentacene TFT is achieved by structurally modifying the c-PVP gate insulator through the dimethyl ketone treatment.

中文翻译：

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使用二甲基酮对并五苯晶体管中的聚（4-乙烯基苯酚）绝缘体进行结构改性

摘要 我们展示了二甲基酮处理对并五苯薄膜晶体管 (TFT) 中交联聚 (4-乙烯基苯酚) (c-PVP) 栅极绝缘体的结构改性。这里，在旋涂绝缘体溶液后立即进行二甲基酮处理，然后进行热退火以交联 PVP 分子。发现二甲酮处理降低了PVP栅极绝缘体的表面能并使PVP膜更薄。X射线衍射和原子力显微镜分析结果表明，二甲基酮处理的c-PVP绝缘体有助于提高并五苯半导体薄膜的结晶度，降低并五苯薄膜中层状晶粒和体相微晶的密度。最后，