First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding,Physica Status Solidi (A) - Applications and Materials Science

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First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-09-08 , DOI: 10.1002/pssa.202000395
Yuki Yamada ₁ , Masahiro Nada ₂ , Miyuki Uomoto ₃ , Takehito Shimatsu ₃ , Fumito Nakajima ₁ , Hideaki Matsuzaki ₁

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A novel high‐speed photodiode (PD) with an InGaAs/Si structure fabricated by atomic‐diffusion bonding (ADB) is proposed with the aim of improving the heat transfer. The fabricated PD shows a responsivity of 0.42 A W⁻¹ and a 3 dB bandwidth of over 50 GHz. The maximum damage‐threshold photocurrent, or high‐power tolerance, is higher than that of a conventional PD on an InP substrate, thanks to the high thermal conductivity of Si used as the collector in the PD.

中文翻译：

首次展示了通过原子扩散键合制造的高速，高耐压InGaAs / Si光电二极管

提出了一种通过原子扩散键合（ADB）制造的具有InGaAs / Si结构的新型高速光电二极管（PD），目的是改善热传递。所制造的PD显示出0.42 A W ^-1的响应度和超过50 GHz的3 dB带宽。由于在PD中用作集电极的Si具有很高的导热性，因此最大损伤阈值光电流或高功率耐受性高于InP衬底上的常规PD。

更新日期：2020-09-08

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