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Deep‐Level Defect in Quasi‐Vertically Oriented CuSbS2 Thin Film
Solar RRL ( IF 6.0 ) Pub Date : 2020-09-08 , DOI: 10.1002/solr.202000319 Yuanfang Zhang 1 , Jialiang Huang 1 , Xueyun Zhang 1 , Robert Lee Chin 1 , Michael P. Nielsen 1 , Germain Rey 1 , Yiyu Zeng 1 , Henner Kampwerth 1 , Ziv Hameiri 1 , Nicholas J. Ekins-Daukes 1 , Xiaojing Hao 1
Solar RRL ( IF 6.0 ) Pub Date : 2020-09-08 , DOI: 10.1002/solr.202000319 Yuanfang Zhang 1 , Jialiang Huang 1 , Xueyun Zhang 1 , Robert Lee Chin 1 , Michael P. Nielsen 1 , Germain Rey 1 , Yiyu Zeng 1 , Henner Kampwerth 1 , Ziv Hameiri 1 , Nicholas J. Ekins-Daukes 1 , Xiaojing Hao 1
Affiliation
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The anomalous optoelectronic properties of a quasi‐vertical orientated Chalcostibite CuSbS2 thin film synthesized on glass substrate are studied in detail. Two well‐separated absorption edges of CuSbS2 are identified by photothermal‐deflection spectroscopy (PDS) at 1.48 and 0.90 eV. The formation mechanism of the 0.9 eV infrared edge is found to be crystal orientation related. The properties of the 0.9 eV absorption edge are subject to detailed investigation using temperature‐dependent photoluminescence (TDPL) characterization, which attribute the origin of this phenomenon to a deep‐level defect state near the mid‐bandgap of CuSbS2.
中文翻译：
准垂直取向的CuSbS2薄膜的深层缺陷
详细研究了在玻璃基板上合成的准垂直取向黄铜矿CuSbS 2薄膜的异常光电性能。通过光热偏转光谱法（PDS）在1.48 eV和0.90 eV处识别出CuSbS 2的两个分离良好的吸收边缘。发现0.9 eV红外边缘的形成机理与晶体取向有关。0.9 eV吸收边的特性需要使用依赖温度的光致发光（TDPL）表征进行详细研究，该现象的根源是CuSbS 2中带隙附近的深层缺陷状态。
更新日期：2020-11-06
中文翻译：
准垂直取向的CuSbS2薄膜的深层缺陷
详细研究了在玻璃基板上合成的准垂直取向黄铜矿CuSbS 2薄膜的异常光电性能。通过光热偏转光谱法（PDS）在1.48 eV和0.90 eV处识别出CuSbS 2的两个分离良好的吸收边缘。发现0.9 eV红外边缘的形成机理与晶体取向有关。0.9 eV吸收边的特性需要使用依赖温度的光致发光（TDPL）表征进行详细研究，该现象的根源是CuSbS 2中带隙附近的深层缺陷状态。
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